Infineon FP50R12KT4

Hersteller	Infineon
Herst.-Teilenr.	FP50R12KT4
LCSC-Nr.	C534047
Verp.	-
Kundennummer
Hauptmerkm.	1.2kV FS (Field Stop) IGBT Modules RoHS
Datenblatt	Infineon FP50R12KT4
RoHS-Konformität	1 Dokumente verfügbar

Produktspezifikationen

Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	280W;160W
Td(off)	430ns
Td(on)	170ns;60ns
Current - Collector(Ic)	50A;25A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF;50pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	200nC@15V
Vce Saturation(VCE(sat))	2.25V;-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	8.4mJ;2.8mJ;4.3mJ;1.4mJ;2.2mJ;2.4mJ
Turn-On Energy (Eon)	5.7mJ;7.7mJ;2mJ;2.65mJ;2.9mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	2.8nF;1.45nF
Output Capacitance(Coes)	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	280W;160W
Td(off)	430ns
Td(on)	170ns;60ns
Current - Collector(Ic)	50A;25A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF;50pF
IGBT Type	FS (Field Stop)

Typ	Beschreibung
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	200nC@15V
Vce Saturation(VCE(sat))	2.25V;-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	8.4mJ;2.8mJ;4.3mJ;1.4mJ;2.2mJ;2.4mJ
Turn-On Energy (Eon)	5.7mJ;7.7mJ;2mJ;2.65mJ;2.9mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	2.8nF;1.45nF
Output Capacitance(Coes)	-

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Alle

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	280W;160W
Td(off)	430ns
Td(on)	170ns;60ns
Current - Collector(Ic)	50A;25A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF;50pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	200nC@15V
Vce Saturation(VCE(sat))	2.25V;-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	8.4mJ;2.8mJ;4.3mJ;1.4mJ;2.2mJ;2.4mJ
Turn-On Energy (Eon)	5.7mJ;7.7mJ;2mJ;2.65mJ;2.9mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	2.8nF;1.45nF
Output Capacitance(Coes)	-

Typ	Beschreibung
Kategorie	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Hersteller	Infineon
Verp.	-
Pd - Power Dissipation	280W;160W
Td(off)	430ns
Td(on)	170ns;60ns
Current - Collector(Ic)	50A;25A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	100pF;50pF
IGBT Type	FS (Field Stop)

Typ	Beschreibung
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	200nC@15V
Vce Saturation(VCE(sat))	2.25V;-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	8.4mJ;2.8mJ;4.3mJ;1.4mJ;2.2mJ;2.4mJ
Turn-On Energy (Eon)	5.7mJ;7.7mJ;2mJ;2.65mJ;2.9mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	2.8nF;1.45nF
Output Capacitance(Coes)	-