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TECH PUBLIC MUN5211DW1T1G(TP)
| Hersteller | TECH PUBLICAsian Brands |
| Herst.-Teilenr. | MUN5211DW1T1G(TP) |
| LCSC-Nr. | C53340904 |
| Verp. | SOT-363 |
| Kundennummer | |
| Hauptmerkm. | 50V 30 50mA 150mW 2 NPN (Pre-Biased) NPN SOT-363 Single, Pre-Biased Bipolar Transistors |
| Datenblatt | TECH PUBLIC MUN5211DW1T1G(TP) |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TECH PUBLIC | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage VEBO | - | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 50mA | |
| Output Voltage(VO(on)) | 300mV@10mA,0.5mA | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| Number | 2 NPN (Pre-Biased) | |
| type | NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TECH PUBLIC | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage VEBO | - | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 50mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV@10mA,0.5mA | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| Number | 2 NPN (Pre-Biased) | |
| type | NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Two DTC114E transistors integrated in a single package
- Epitaxial planar die construction
- Built-in bias resistors (R1: 10kΩ, R2: 10kΩ)
- Lead-free versions available
Vorrätig: 2,960
2,960 Ab Lager, sofort versandfertig
Minimum: 20Vielfaches: 20Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 20+ | $ 0.0384$ 0.0365 | $ 0.73 |
| 200+ | $ 0.0299$ 0.0285 | $ 5.70 |
| 600+ | $ 0.0251$ 0.0239 | $ 14.34 |
| 3,000+ | $ 0.0223$ 0.0212 | $ 63.60 |
| 9,000+ | $ 0.0198$ 0.0189 | $ 170.10 |
| 21,000+ | $ 0.0185$ 0.0176 | $ 369.60 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TECH PUBLIC | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage VEBO | - | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 50mA | |
| Output Voltage(VO(on)) | 300mV@10mA,0.5mA | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| Number | 2 NPN (Pre-Biased) | |
| type | NPN |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | TECH PUBLIC | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 250MHz | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage VEBO | - | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 50mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV@10mA,0.5mA | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 150mW | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| Number | 2 NPN (Pre-Biased) | |
| type | NPN |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Two DTC114E transistors integrated in a single package
- Epitaxial planar die construction
- Built-in bias resistors (R1: 10kΩ, R2: 10kΩ)
- Lead-free versions available
C53340904 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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|---|---|---|---|---|---|---|
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| BCR133S(TP) | TECH PUBLIC | SOT-363 | 2,860 | $0.0366 $0.0385 | ||
| TPUMH2N | TECH PUBLIC | SOT-363 | 1,500 | $ 0.0404 | ||
| DDC144NS-TP | TECH PUBLIC | SOT-363 | 3,000 | $0.0384 $0.0404 |