- 핀아웃
- 풋프린트
실제 제품과 다를 수 있음
EDA 모델EasyEDA
micron MT29F8G01ADAFD12-AAT:F
| 제조업체 | |
| 제조사 품번 | MT29F8G01ADAFD12-AAT:F |
| LCSC 번호 | C5330488 |
| 포장 | TBGA-24 |
| 고객 번호 | |
| 주요 제원 | 8Gbit 2.7V~3.6V SPI TBGA-24 Memory RoHS |
| 데이터시트 | micron MT29F8G01ADAFD12-AAT:F |
| RoHS 준수 | 1개 문서 이용 가능 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | micron | |
| 포장 | TBGA-24 | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Read buffer function;Copy back write function;Software reset function;Hardware write protection function | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 300us | |
| Standby Supply Current | - | |
| Interface | SPI |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | micron | |
| 포장 | TBGA-24 | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Read buffer function;Copy back write function;Software reset function;Hardware write protection function | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 300us | |
| Standby Supply Current | - | |
| Interface | SPI |
도움말 및 피드백유사 제품 보기 (0) >
주요 특징
AI 번역
- Organization:
- Page size: x8: 2,112 bytes (2,048 + 64 bytes); x16: 1,056 words (1,024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks
- Read performance:
- Random read: 25µs
- Sequential read: 30ns (3V x8 only)
- Write performance:
- Page program: 300µs (TYP)
- Block erase: 2ms (TYP)
- Endurance: 100,000 PROGRAM/ERASE cycles
- Data retention: 10 years
- First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles)
- VCC: 2.7V–3.6V
- Automated PROGRAM and ERASE
- Basic NAND command set:
- PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET
- New commands:
- PAGE READ CACHE MODE
- READ UNIQUE ID (contact factory)
- READ ID2 (contact factory)
- Operation status byte provides a software method of detecting:
- PROGRAM/ERASE operation completion
- PROGRAM/ERASE pass/fail condition
- Write-protect status
- Ready/busy# (R/B#) pin provides a hardware method of detecting PROGRAM or ERASE cycle completion
- PRE pin: prefetch on power up
- WP# pin: hardware write protect
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 18.1439 | $ 18.14 |
| 10+ | $ 17.293 | $ 172.93 |
| 30+ | $ 15.8165 | $ 474.50 |
| 100+ | $ 14.53 | $ 1453.00 |
표준 패키지1122/Full Tray | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | micron | |
| 포장 | TBGA-24 | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Read buffer function;Copy back write function;Software reset function;Hardware write protection function | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 300us | |
| Standby Supply Current | - | |
| Interface | SPI |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | micron | |
| 포장 | TBGA-24 | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Read buffer function;Copy back write function;Software reset function;Hardware write protection function | |
| Memory Size | 8Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 2ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 300us | |
| Standby Supply Current | - | |
| Interface | SPI |
도움말 및 피드백유사 제품 보기 (0) >
주요 특징
AI 번역
- Organization:
- Page size: x8: 2,112 bytes (2,048 + 64 bytes); x16: 1,056 words (1,024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks
- Read performance:
- Random read: 25µs
- Sequential read: 30ns (3V x8 only)
- Write performance:
- Page program: 300µs (TYP)
- Block erase: 2ms (TYP)
- Endurance: 100,000 PROGRAM/ERASE cycles
- Data retention: 10 years
- First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles)
- VCC: 2.7V–3.6V
- Automated PROGRAM and ERASE
- Basic NAND command set:
- PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET
- New commands:
- PAGE READ CACHE MODE
- READ UNIQUE ID (contact factory)
- READ ID2 (contact factory)
- Operation status byte provides a software method of detecting:
- PROGRAM/ERASE operation completion
- PROGRAM/ERASE pass/fail condition
- Write-protect status
- Ready/busy# (R/B#) pin provides a hardware method of detecting PROGRAM or ERASE cycle completion
- PRE pin: prefetch on power up
- WP# pin: hardware write protect
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |