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Modele EDAEasyEDA
Nexperia PXN012-60QLJ
| Producent | |
| Nr części prod. | PXN012-60QLJ |
| Nr LCSC | C5280958 |
| Opak. | MLPAK-33-8 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 60V 42A MLPAK-33-8 |
| Karta Katalogowa | Nexperia PXN012-60QLJ |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | MLPAK-33-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 11.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 957pF | |
| Gate Charge(Qg) | 9.64nC@4.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | MLPAK-33-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 11.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 957pF | |
| Gate Charge(Qg) | 9.64nC@4.5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
General purpose, 42 A rated, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package.
Funkcje
Tłumaczenie AI
- Logic level compatibility
- Trench MOSFET technology
- Thermally efficient package in a small form factor (3.3 mm×3.3 mm footprint)
Zastosowania
Tłumaczenie AI
- Secondary side synchronous rectification
- DC-to-DC converters
- Motor drive
- LED lighting
- Load switching
- Auxiliary control
- Fan control
Na stanie: 2,478
2,478 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.2701 | $ 1.27 |
| 10+ | $ 1.0571 | $ 10.57 |
| 30+ | $ 0.9506 | $ 28.52 |
| 100+ | $ 0.8457 | $ 84.57 |
| 500+ | $ 0.7539 | $ 376.95 |
| 1,000+ | $ 0.7211 | $ 721.10 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | MLPAK-33-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 11.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 957pF | |
| Gate Charge(Qg) | 9.64nC@4.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | MLPAK-33-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 11.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 957pF | |
| Gate Charge(Qg) | 9.64nC@4.5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
General purpose, 42 A rated, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package.
Funkcje
Tłumaczenie AI
- Logic level compatibility
- Trench MOSFET technology
- Thermally efficient package in a small form factor (3.3 mm×3.3 mm footprint)
Zastosowania
Tłumaczenie AI
- Secondary side synchronous rectification
- DC-to-DC converters
- Motor drive
- LED lighting
- Load switching
- Auxiliary control
- Fan control
C5280958 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| HSBB6056 | HUASHUO | PRPAK3x3-8L | 6,620 | $ 0.3427 | ||
| CSD18543Q3A | TI | VSONP-8(3.3x3.3) | 1,611 | $ 0.6949 | ||
| NTTFS012N10MDTAG | onsemi | WDFN-8(3.3x3.3) | 8 | $ 1.5077 | ||
| AGM12N10AP | AGMSEMI | PDFN3.3x3.3-8 | 41,505 | $ 0.3648 | ||
| LWT1H13AD3 | Lewa Micro | PDFN-8L(3.3x3.3) | 4,545 | $ 0.2893 | ||
| SIS176LDN-T1-GE3 | VISHAY | PowerPAK1212-8 | 3 | $ 1.0824 | ||
| DMT10H015LFG-7 | DIODES | PowerDI3333-8 | 1 | $ 1.8716 | ||
| NVTFS5C673NLWFTAG | onsemi | WDFN-8(3.3x3.3) | 0 | $ 1.6409 | ||
| DMT6008LFG-13 | DIODES | PowerDI3333-8 | 0 | $ 0.4622 | ||
| NCEP12N10AQ | NCE | DFN-8L(3.3x3.3) | 0 | $ 0.4319 |