Abbildung ähnlich
EDA-ModelleEasyEDA
ST STGW20V60DF
| Hersteller | |
| Herst.-Teilenr. | STGW20V60DF |
| LCSC-Nr. | C5268554 |
| Verp. | TO-247 |
| Kundennummer | |
| Hauptmerkm. | 167W 40A 600V TO-247 Single IGBTs RoHS |
| Datenblatt | ST STGW20V60DF |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Td(off) | 149ns | |
| Pd - Power Dissipation | 167W | |
| Td(on) | 38ns | |
| Current - Collector(Ic) | 40A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 64pF | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@20A,15V | |
| Reverse Recovery Time(trr) | 40ns | |
| Switching Energy(Eoff) | 130uJ | |
| Turn-On Energy (Eon) | 200uJ | |
| Input Capacitance(Cies) | 2.8nF | |
| Gate Charge(Qg) | 116nC@15V | |
| Output Capacitance(Coes) | 110pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Td(off) | 149ns | |
| Pd - Power Dissipation | 167W | |
| Td(on) | 38ns | |
| Current - Collector(Ic) | 40A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 64pF |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@20A,15V | |
| Reverse Recovery Time(trr) | 40ns | |
| Switching Energy(Eoff) | 130uJ | |
| Turn-On Energy (Eon) | 200uJ | |
| Input Capacitance(Cies) | 2.8nF | |
| Gate Charge(Qg) | 116nC@15V | |
| Output Capacitance(Coes) | 110pF |
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Beschreibung
KI-Übersetzung
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Merkmale
KI-Übersetzung
- Maximum junction temperature: T_J = 175 ℃
- Very high speed switching series
- Tail-less switching off
- Low saturation voltage: V_CE(sat) = 1.8 V (typ.) at I_C = 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Lead free package
Anwendungen
KI-Übersetzung
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
Vorrätig: 18
18 Ab Lager, sofort versandfertig
Eingestellt
Nach Abverkauf wird dieser Artikel als „Nicht verfügbar“ gekennzeichnet.
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 4.7125 | $ 4.71 |
| 10+ | $ 4.0636 | $ 40.64 |
| 30+ | $ 3.6793 | $ 110.38 |
| 90+ | $ 3.2902 | $ 296.12 |
| 510+ | $ 3.1107 | $ 1586.46 |
| 990+ | $ 3.0288 | $ 2998.51 |
Standardgehäuse30/Full Tube | ||
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Td(off) | 149ns | |
| Pd - Power Dissipation | 167W | |
| Td(on) | 38ns | |
| Current - Collector(Ic) | 40A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 64pF | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@20A,15V | |
| Reverse Recovery Time(trr) | 40ns | |
| Switching Energy(Eoff) | 130uJ | |
| Turn-On Energy (Eon) | 200uJ | |
| Input Capacitance(Cies) | 2.8nF | |
| Gate Charge(Qg) | 116nC@15V | |
| Output Capacitance(Coes) | 110pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Td(off) | 149ns | |
| Pd - Power Dissipation | 167W | |
| Td(on) | 38ns | |
| Current - Collector(Ic) | 40A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 64pF |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@20A,15V | |
| Reverse Recovery Time(trr) | 40ns | |
| Switching Energy(Eoff) | 130uJ | |
| Turn-On Energy (Eon) | 200uJ | |
| Input Capacitance(Cies) | 2.8nF | |
| Gate Charge(Qg) | 116nC@15V | |
| Output Capacitance(Coes) | 110pF |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Merkmale
KI-Übersetzung
- Maximum junction temperature: T_J = 175 ℃
- Very high speed switching series
- Tail-less switching off
- Low saturation voltage: V_CE(sat) = 1.8 V (typ.) at I_C = 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Lead free package
Anwendungen
KI-Übersetzung
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| MLG60T65FDK | Minos | TO-247 | 415 | $2.0864 $2.1962 | ||
| MLG60T65FUK | Minos | TO-247 | 420 | $1.8971 $1.9969 | ||
| SGT50T65SDM1P7 | Hangzhou Silan Microelectronics | TO-247-3L | 39 | $ 2.1965 | ||
| SPT25N120T1 | SPTECH | TO-247-3 | 18 | $1.8139 $1.9093 | ||
| MLG60N65FUK | Minos | TO-247 | 108 | $ 1.7612 | ||
| STGW40M120DF3 | ST | TO-247 | 6 | $ 8.9148 | ||
| STGW20H60DF | ST | TO-247AC-3 | 0 | $ 3.1567 | ||
| FGH12040WD-F155 | onsemi | TO-247-3 | 0 | $ 8.7633 | ||
| BIDW50N65T | BOURNS | TO-247 | 0 | $ 4.385 | ||
| FGH50T65UPD | onsemi | TO-247-3 | 0 | $ 5.3202 |