DIODES DMN1250UFEL-7
| Produttore | |
| Cod. Prod. | DMN1250UFEL-7 |
| Cod. LCSC | C5245262 |
| Imballo | U-QFN1515-12 |
| Numero Cliente | |
| Attr. chiave | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Scheda Tecnica | DIODES DMN1250UFEL-7 |
| Conformità RoHS | 4 documenti disponibili |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | U-QFN1515-12 | |
| Configuration | Common source | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 10pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 280mΩ@4.5V | |
| Number | 3 N-channels | |
| Input Capacitance(Ciss) | 146pF | |
| Gate Charge(Qg) | 1.3nC@4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | U-QFN1515-12 | |
| Configuration | Common source | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 10pF | |
| Current - Continuous Drain(Id) | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 280mΩ@4.5V | |
| Number | 3 N-channels | |
| Input Capacitance(Ciss) | 146pF | |
| Gate Charge(Qg) | 1.3nC@4.5V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This next-generation MOSFET is designed to minimize on-resistance (R<sub>SS(ON)</sub>) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Low Gate Charge RDS(ON): 280mΩ @ VGS = 4.5V (Single MOSFET)
- 8 N-Channel MOSFET in One Package
- Common Source
- Small Footprint 1.5mm × 1.5mm
- Totally Lead-Free & Fully RoHS Compliant
- Halogen, Antimony and Beryllium Free. “Green” Device
Applicazioni
Traduzione AI
- Battery Management - Load Switch - Battery Protection
Disponibile: 20
20 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.9943 | $ 0.99 |
| 10+ | $ 0.9797 | $ 9.80 |
| 30+ | $ 0.97 | $ 29.10 |
| 100+ | $ 0.9602 | $ 96.02 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | U-QFN1515-12 | |
| Configuration | Common source | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 10pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 280mΩ@4.5V | |
| Number | 3 N-channels | |
| Input Capacitance(Ciss) | 146pF | |
| Gate Charge(Qg) | 1.3nC@4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | U-QFN1515-12 | |
| Configuration | Common source | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 10pF | |
| Current - Continuous Drain(Id) | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 280mΩ@4.5V | |
| Number | 3 N-channels | |
| Input Capacitance(Ciss) | 146pF | |
| Gate Charge(Qg) | 1.3nC@4.5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This next-generation MOSFET is designed to minimize on-resistance (R<sub>SS(ON)</sub>) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Low Gate Charge RDS(ON): 280mΩ @ VGS = 4.5V (Single MOSFET)
- 8 N-Channel MOSFET in One Package
- Common Source
- Small Footprint 1.5mm × 1.5mm
- Totally Lead-Free & Fully RoHS Compliant
- Halogen, Antimony and Beryllium Free. “Green” Device
Applicazioni
Traduzione AI
- Battery Management - Load Switch - Battery Protection
C5245262 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

