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EDA-ModelleEasyEDA
ROHM DTC123JU3T106
| Hersteller | |
| Herst.-Teilenr. | DTC123JU3T106 |
| LCSC-Nr. | C507480 |
| Verp. | SOT-323 |
| Kundennummer | |
| Hauptmerkm. | TRANS PREBIAS 50V SOT-323 |
| Datenblatt | ROHM DTC123JU3T106 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | SOT-323 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV@5mA,0.25mA | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.3V | |
| Operating temperature | -40℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | SOT-323 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV@5mA,0.25mA | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.3V | |
| Operating temperature | -40℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-In Biasing Resistors
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
- Only the on/off conditions need to be set for operation, making the circuit design easy
- Complementary PNP Types: DTA123J sereis
Anwendungen
KI-Übersetzung
- INVERTER
- INTERFACE
- DRIVER
Vorrätig: 3,330
3,330 Ab Lager, sofort versandfertig
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0419 | $ 0.42 |
| 100+ | $ 0.0335 | $ 3.35 |
| 300+ | $ 0.0293 | $ 8.79 |
| 3,000+ | $ 0.0227 | $ 68.10 |
| 6,000+ | $ 0.0201 | $ 120.60 |
| 9,000+ | $ 0.0189 | $ 170.10 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | SOT-323 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 300mV@5mA,0.25mA | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.3V | |
| Operating temperature | -40℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | SOT-323 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV@5mA,0.25mA | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.3V | |
| Operating temperature | -40℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-In Biasing Resistors
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
- Only the on/off conditions need to be set for operation, making the circuit design easy
- Complementary PNP Types: DTA123J sereis
Anwendungen
KI-Übersetzung
- INVERTER
- INTERFACE
- DRIVER
C507480 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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