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WILLSEMI WNM2046C-3/TR
| Produttore | WILLSEMIAsian Brands |
| Cod. Prod. | WNM2046C-3/TR |
| Cod. LCSC | C506106 |
| Imballo | DFN1006-3L |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 20V 0.6A DFN1006-3L |
| Scheda Tecnica | WILLSEMI WNM2046C-3/TR |
| Parti alternative | 6 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | WILLSEMI | |
| Imballo | DFN1006-3L | |
| Output Capacitance(Coss) | 7pF | |
| Pd - Power Dissipation | 320mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | 1.07nC@4.5V | |
| Vgs | ±10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | WILLSEMI | |
| Imballo | DFN1006-3L | |
| Output Capacitance(Coss) | 7pF | |
| Pd - Power Dissipation | 320mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | 1.07nC@4.5V | |
| Vgs | ±10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046C is Pb-free.
Caratteristiche
Traduzione AI
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
Applicazioni
Traduzione AI
- DC/DC converters
- Power supply converters circuit
- Load/Power Switching for portable device
Disponibile: 6,100
6,100 Pronta consegna
Minimo: 10Multiplo: 10Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 10+ | $ 0.0868 | $ 0.87 |
| 100+ | $ 0.0722 | $ 7.22 |
| 300+ | $ 0.0649 | $ 19.47 |
| 1,000+ | $ 0.0594 | $ 59.40 |
| 5,000+ | $ 0.055 | $ 275.00 |
| 10,000+ | $ 0.0528 | $ 528.00 |
Package Standard10000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | WILLSEMI | |
| Imballo | DFN1006-3L | |
| Output Capacitance(Coss) | 7pF | |
| Pd - Power Dissipation | 320mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | 1.07nC@4.5V | |
| Vgs | ±10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | WILLSEMI | |
| Imballo | DFN1006-3L | |
| Output Capacitance(Coss) | 7pF | |
| Pd - Power Dissipation | 320mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 600mA |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 420mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 30pF | |
| Gate Charge(Qg) | 1.07nC@4.5V | |
| Vgs | ±10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The WPM2046C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046C is Pb-free.
Caratteristiche
Traduzione AI
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
Applicazioni
Traduzione AI
- DC/DC converters
- Power supply converters circuit
- Load/Power Switching for portable device
C506106 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| WNM2046A-3/TR | WILLSEMI | DFN1006-3L | 5,030 | $ 0.06 | ||
| WNM2046-3/TR | WILLSEMI | DFN1006-3L | 9,580 | $ 0.0395 | ||
| WNM2046E-3/TR | WILLSEMI | DFN1006-3L | 7,920 | $ 0.0447 | ||
| WNM2046B-3/TR | WILLSEMI | DFN1006-3L | 0 | $ 0.0942 | ||
| WNM2096-3/TR | WILLSEMI | DFN1006-3L | 0 | $ 0.1071 | ||
| WNM2072-3/TR | WILLSEMI | DFN1006-3L | 0 | $ 0.0465 |