- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
NCE NCES120P040T4
| Produttore | NCEAsian Brands |
| Cod. Prod. | NCES120P040T4 |
| Cod. LCSC | C50337706 |
| Imballo | TO-247-4L |
| Numero Cliente | |
| Attr. chiave | 1.2kV 65A 4.8V 326W 52mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs |
| Scheda Tecnica | NCE NCES120P040T4 |
| Parti alternative | 6 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-247-4L | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 86pF | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Pd - Power Dissipation | 326W | |
| RDS(on) | 52mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.21nF | |
| Gate Charge(Qg) | 107nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-247-4L | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 86pF | |
| Current - Continuous Drain(Id) | 65A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Pd - Power Dissipation | 326W | |
| RDS(on) | 52mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.21nF | |
| Gate Charge(Qg) | 107nC | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
NCES120P040T4 is a silicon carbide MOSFET that contributes to application miniaturization and low power consumption. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. It features a 4-pin package type with a drive source pin, maximizing the high-speed switching performance characteristics of SiC MOSFETs.
Caratteristiche
Traduzione AI
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple gate drive
- Lead-free pin plating; RoHS compliant
Applicazioni
Traduzione AI
- Solar inverters
- DC/DC converters
- Switch-mode power supplies
- Induction heating
- Motor drives
Disponibile: 6
6 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 3.0386 | $ 3.04 |
| 10+ | $ 2.6068 | $ 26.07 |
| 30+ | $ 2.3519 | $ 70.56 |
| 90+ | $ 2.0921 | $ 188.29 |
| 510+ | $ 1.9726 | $ 1006.03 |
| 990+ | $ 1.9185 | $ 1899.32 |
Package Standard30/Full Tube | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-247-4L | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 86pF | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Pd - Power Dissipation | 326W | |
| RDS(on) | 52mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.21nF | |
| Gate Charge(Qg) | 107nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-247-4L | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 86pF | |
| Current - Continuous Drain(Id) | 65A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Pd - Power Dissipation | 326W | |
| RDS(on) | 52mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.21nF | |
| Gate Charge(Qg) | 107nC | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
NCES120P040T4 is a silicon carbide MOSFET that contributes to application miniaturization and low power consumption. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. It features a 4-pin package type with a drive source pin, maximizing the high-speed switching performance characteristics of SiC MOSFETs.
Caratteristiche
Traduzione AI
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple gate drive
- Lead-free pin plating; RoHS compliant
Applicazioni
Traduzione AI
- Solar inverters
- DC/DC converters
- Switch-mode power supplies
- Induction heating
- Motor drives
C50337706 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NCES120P040T4N | NCE | TO-247-4LP | 10 | $ 3.0386 | ||
| NCES120P030T4N | NCE | TO-247-4LP | 30 | $ 3.3398 | ||
| NCES120P030T4 | NCE | TO-247-4L | 20 | $ 3.3398 | ||
| NCES120P020T4 | NCE | TO-247-4L | 28 | $ 5.4143 | ||
| NCES120P013T4 | NCE | TO-247-4L | 0 | $ 6.9376 | ||
| NCES120P013T4N | NCE | TO-247-4LP | 0 | $ 6.9376 |