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EDA-ModelleEasyEDA
NCE NCE70T540I
| Hersteller | NCEAsian Brands |
| Herst.-Teilenr. | NCE70T540I |
| LCSC-Nr. | C502912 |
| Verp. | TO-251 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 700V TO-251 |
| Datenblatt | NCE NCE70T540I |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-251 | |
| Output Capacitance(Coss) | 37pF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF | |
| RDS(on) | 540mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 14.6nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-251 | |
| Output Capacitance(Coss) | 37pF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF | |
| RDS(on) | 540mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 14.6nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Merkmale
KI-Übersetzung
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Anwendungen
KI-Übersetzung
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.6233 | $ 0.62 |
| 10+ | $ 0.4798 | $ 4.80 |
| 30+ | $ 0.4177 | $ 12.53 |
| 75+ | $ 0.3412 | $ 25.59 |
| 525+ | $ 0.3061 | $ 160.70 |
| 975+ | $ 0.2854 | $ 278.27 |
Standardgehäuse75/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-251 | |
| Output Capacitance(Coss) | 37pF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF | |
| RDS(on) | 540mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 14.6nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-251 | |
| Output Capacitance(Coss) | 37pF | |
| Pd - Power Dissipation | 69W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF | |
| RDS(on) | 540mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 14.6nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Merkmale
KI-Übersetzung
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Anwendungen
KI-Übersetzung
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
C502912 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NCE65T540I | NCE | TO-251 | 580 | $ 0.6408 |