NCE NCE1502R
| Hersteller | NCEAsian Brands |
| Herst.-Teilenr. | NCE1502R |
| LCSC-Nr. | C502844 |
| Verp. | SOT-223-3L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 150V 2A SOT-223-3L |
| Datenblatt | NCE NCE1502R |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | SOT-223-3L | |
| Output Capacitance(Coss) | 36pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 235pF | |
| Gate Charge(Qg) | 8nC@75V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | SOT-223-3L | |
| Output Capacitance(Coss) | 36pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 2A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 235pF | |
| Gate Charge(Qg) | 8nC@75V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
The NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Merkmale
KI-Übersetzung
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Anwendungen
KI-Übersetzung
- Power switching application
- Hard switched and high frequency circuits
Vorrätig: 300
300 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.167 | $ 0.84 |
| 50+ | $ 0.1284 | $ 6.42 |
| 150+ | $ 0.1119 | $ 16.79 |
| 500+ | $ 0.0913 | $ 45.65 |
| 2,500+ | $ 0.0821 | $ 205.25 |
| 5,000+ | $ 0.0766 | $ 383.00 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | SOT-223-3L | |
| Output Capacitance(Coss) | 36pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 235pF | |
| Gate Charge(Qg) | 8nC@75V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | SOT-223-3L | |
| Output Capacitance(Coss) | 36pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 2A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 235pF | |
| Gate Charge(Qg) | 8nC@75V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Merkmale
KI-Übersetzung
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Anwendungen
KI-Übersetzung
- Power switching application
- Hard switched and high frequency circuits
C502844 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
