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EDA-ModelleEasyEDA
VISHAY SIHH180N60E-T1-GE3
| Hersteller | |
| Herst.-Teilenr. | SIHH180N60E-T1-GE3 |
| LCSC-Nr. | C499602 |
| Verp. | PowerPAK(8x8) |
| Kundennummer | |
| Hauptmerkm. | 114W 600V 19A 3V 155mΩ@10V 1 N-channel N-Channel PowerPAK(8x8) Single FETs, MOSFETs RoHS |
| Datenblatt | VISHAY SIHH180N60E-T1-GE3 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | PowerPAK(8x8) | |
| Output Capacitance(Coss) | 56pF | |
| Pd - Power Dissipation | 114W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 19A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.085nF | |
| Gate Charge(Qg) | 33nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | PowerPAK(8x8) | |
| Output Capacitance(Coss) | 56pF | |
| Pd - Power Dissipation | 114W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 19A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.085nF | |
| Gate Charge(Qg) | 33nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 4th Generation E-Series Technology
- Low Figure of Merit (FOM) Ron × Qg
- Low Effective Capacitance Co(er)
- Reduced Switching and Conduction Losses
- Avalanche Energy Rated (UIS)
- Kelvin Connection for Reduced Gate Noise
Anwendungen
KI-Übersetzung
- Server and telecom power supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) supplies
- Lighting
- High Intensity Discharge (HID) lamps
- Fluorescent ballast lighting
- Industrial applications
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (photovoltaic inverters)
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.3911 | $ 1.39 |
| 10+ | $ 1.3621 | $ 13.62 |
| 30+ | $ 1.2886 | $ 38.66 |
| 100+ | $ 1.2687 | $ 126.87 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | PowerPAK(8x8) | |
| Output Capacitance(Coss) | 56pF | |
| Pd - Power Dissipation | 114W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 19A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.085nF | |
| Gate Charge(Qg) | 33nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | PowerPAK(8x8) | |
| Output Capacitance(Coss) | 56pF | |
| Pd - Power Dissipation | 114W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 19A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.085nF | |
| Gate Charge(Qg) | 33nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 4th Generation E-Series Technology
- Low Figure of Merit (FOM) Ron × Qg
- Low Effective Capacitance Co(er)
- Reduced Switching and Conduction Losses
- Avalanche Energy Rated (UIS)
- Kelvin Connection for Reduced Gate Noise
Anwendungen
KI-Übersetzung
- Server and telecom power supplies
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) supplies
- Lighting
- High Intensity Discharge (HID) lamps
- Fluorescent ballast lighting
- Industrial applications
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (photovoltaic inverters)
C499602 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SIHH080N60E-T1-GE3 | VISHAY | PowerPAK(8x8) | 6 | $ 4.5576 | ||
| SIHH24N65E-T1-GE3 | VISHAY | PowerPAK(8x8) | 0 | $ 4.9592 | ||
| SIHH125N60EF-T1GE3 | VISHAY | PowerPAK(8x8) | 0 | $ 4.1506 | ||
| SIHH21N65EF-T1-GE3 | VISHAY | PowerPAK(8x8) | 0 | $ 4.4577 |