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Hangzhou Silan Microelectronics SVF4N60CAD
| Producent | Hangzhou Silan MicroelectronicsAsian Brands |
| Nr części prod. | SVF4N60CAD |
| Nr LCSC | C467746 |
| Opak. | TO-252 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 600V 4A TO-252 |
| Karta Katalogowa | Hangzhou Silan Microelectronics SVF4N60CAD |
| Części alternatywne | 9 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Hangzhou Silan Microelectronics | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 433pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Hangzhou Silan Microelectronics | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 433pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement-mode power MOSFET fabricated using Silicon's proprietary F-Cell high-voltage planar VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Funkcje
Tłumaczenie AI
- 4A, 600V, RDS(on)(typ) = 2.0 Ω @ VGS = 10 V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
Zastosowania
Tłumaczenie AI
- AC-DC power supply
- DC-DC converter
- H-bridge PWM motor driver
Brak w magazynie
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Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 5+ | $ 0.3809 | $ 1.90 |
| 50+ | $ 0.3138 | $ 15.69 |
| 150+ | $ 0.285 | $ 42.75 |
| 500+ | $ 0.2491 | $ 124.55 |
| 2,500+ | $ 0.2331 | $ 582.75 |
| 5,000+ | $ 0.2235 | $ 1117.50 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Hangzhou Silan Microelectronics | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 433pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Hangzhou Silan Microelectronics | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 77W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 433pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement-mode power MOSFET fabricated using Silicon's proprietary F-Cell high-voltage planar VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Funkcje
Tłumaczenie AI
- 4A, 600V, RDS(on)(typ) = 2.0 Ω @ VGS = 10 V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
Zastosowania
Tłumaczenie AI
- AC-DC power supply
- DC-DC converter
- H-bridge PWM motor driver
C467746 Biblioteka EasyEDA
Jeszcze nie narysowano
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| SVF4N65RDTR | Hangzhou Silan Microelectronics | TO-252-2 | 5,000 | $ 0.1983 | ||
| SVF5N60D | Hangzhou Silan Microelectronics | TO-252-2(DPAK) | 5 | $ 0.5427 | ||
| SVF5N60DTR | Hangzhou Silan Microelectronics | TO-252-2L | 10 | $ 0.5134 | ||
| SVF4N65DTR | Hangzhou Silan Microelectronics | TO-252-2(DPAK) | 5,475 | $ 0.2625 | ||
| SVF6N60DTR | Hangzhou Silan Microelectronics | TO-252-2L | 14 | $ 0.6158 | ||
| SVF65R950CDTR | Hangzhou Silan Microelectronics | TO-252-2L | 2,157 | $ 0.4459 | ||
| SVF6N60D | Hangzhou Silan Microelectronics | TO-252-2(DPAK) | 2,185 | $ 0.4783 | ||
| SVF4N60RD-TR | Hangzhou Silan Microelectronics | TO-252-2 | 0 | $ 0.3775 | ||
| SVF7N65CD | Hangzhou Silan Microelectronics | TO-252 | 0 | $ 0.6351 |