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VISHAY IRF610STRLPBF

제조업체
제조사 품번
IRF610STRLPBF
LCSC 번호
C467555
포장
D2PAK
고객 번호
주요 제원
36W 200V 2.1A 2V 1.5Ω@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS
데이터시트VISHAY IRF610STRLPBF
RoHS 준수1개 문서 이용 가능
대체 부품10
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
수량단가(참고용)총액
1+$ 1.0239$ 1.02
10+$ 1.004$ 10.04
30+$ 0.9902$ 29.71
100+$ 0.9764$ 97.64
표준 패키지800/Full Reel
수량이 많을수록 더 좋은 가격?
$

제품 사양

전체
타입설명
카테고리Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체VISHAY
포장D2PAK
Output Capacitance(Coss)53pF
Pd - Power Dissipation36W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage200V
Current - Continuous Drain(Id)2.1A
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF
Gate Charge(Qg)8.2nC@10V
Vgs±20V
TypeN-Channel
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개요

AI 번역

The third-generation power MOSFETs offer designers the optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness.

The D2PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It delivers the highest power handling capability and the lowest possible on-resistance of any available surface-mount package. Due to its low internal connection resistance, the D2PAK (TO-263) is suitable for high-current applications, capable of dissipating up to 2.0 W in typical SMT applications.

주요 특징

AI 번역
  • Surface mount
  • Available in tape and reel packaging
  • Dynamic dv/dt rated
  • Repetitive avalanche rated
  • Fast switching
  • Easy to parallel
  • Simple drive requirement

대체 부품

MPN제조사포장재고 현황단가
IRF830SPBFVISHAYD2PAK4$ 1.8148
SIHFBC40AS-GE3VISHAYD2PAK(TO-263)100$ 3.1761
IRF610STRRPBFVISHAYD2PAK(TO-263)0$ 1.9131
IRF610SPBFVISHAYD2PAK(TO-263)0$ 3.6496
IRF614STRRPBFVISHAYD2PAK0$ 0.7016
SIHB15N65E-GE3VISHAYD2PAK(TO-263)0$ 4.5618
IRFW610BTMonsemiD2PAK0$ 0.1656
IRFW610BTMFP001onsemiD2PAK0$ 0.7299
SPB03N60C3E3045InfineonTO-2630$ 0.3202
SPB03N60C3InfineonTO-2630$ 0.4861