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EDA-ModelleEasyEDA
Infineon IPW60R180P7
| Hersteller | |
| Herst.-Teilenr. | IPW60R180P7 |
| LCSC-Nr. | C467009 |
| Verp. | TO-247-3 |
| Kundennummer | |
| Hauptmerkm. | 72W 650V 11A 3.5V 180mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datenblatt | Infineon IPW60R180P7 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 19pF | |
| Pd - Power Dissipation | 72W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 381pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.081nF | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 19pF | |
| Pd - Power Dissipation | 72W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 381pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.081nF | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CoolMOS™ 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the advantages of fast-switching SJ MOSFETs with excellent ease of use, such as extremely low ringing tendency, outstanding robustness of the body diode during hard commutation, and superior ESD capability. In addition, ultra-low switching losses and conduction losses make switching applications more efficient, compact, and thermally optimized.
Merkmale
KI-Übersetzung
- Excellent commutation robustness for both hard-switching and soft-switching (PFC and LLC)
- Significantly reduced switching losses and conduction losses
- Outstanding ESD robustness across all products, >2kV (HBM)
- Low RDS(on)*A (<1Ω·mm²) delivers superior RDS(on)-to-package ratio vs. competition
- Fully compliant with JEDEC standards for industrial applications
Anwendungen
KI-Übersetzung
- PFC stage circuits
- Hard-switching PWM stage circuits
- Resonant switching stage circuits for PC desktops, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS
Vorrätig: 53
53 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.7159 | $ 1.72 |
| 10+ | $ 1.452 | $ 14.52 |
| 30+ | $ 1.2865 | $ 38.60 |
| 90+ | $ 1.1177 | $ 100.59 |
| 480+ | $ 1.0407 | $ 499.54 |
| 960+ | $ 1.0079 | $ 967.58 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 19pF | |
| Pd - Power Dissipation | 72W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 381pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.081nF | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 19pF | |
| Pd - Power Dissipation | 72W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 381pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.081nF | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CoolMOS™ 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the advantages of fast-switching SJ MOSFETs with excellent ease of use, such as extremely low ringing tendency, outstanding robustness of the body diode during hard commutation, and superior ESD capability. In addition, ultra-low switching losses and conduction losses make switching applications more efficient, compact, and thermally optimized.
Merkmale
KI-Übersetzung
- Excellent commutation robustness for both hard-switching and soft-switching (PFC and LLC)
- Significantly reduced switching losses and conduction losses
- Outstanding ESD robustness across all products, >2kV (HBM)
- Low RDS(on)*A (<1Ω·mm²) delivers superior RDS(on)-to-package ratio vs. competition
- Fully compliant with JEDEC standards for industrial applications
Anwendungen
KI-Übersetzung
- PFC stage circuits
- Hard-switching PWM stage circuits
- Resonant switching stage circuits for PC desktops, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS
C467009 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IPW65R190C7 | Infineon | TO-247 | 1 | $ 8.1556 | ||
| IPW80R360P7 | Infineon | TO-247-3 | 10 | $ 2.7977 | ||
| MS24N80HCC0 | MASPOWER | TO-247 | 30 | $ 3.2224 | ||
| BMW80N180C1 | Bestirpower | TO-247-3L | 60 | $ 2.3137 | ||
| IPW90R120C3 | Infineon | TO-247 | 186 | $ 13.4049 | ||
| WTM20N65AMP | WPMtek | TO-247 | 20 | $ 1.8588 | ||
| IPW95R310PFD7XKSA1 | Infineon | PG-TO-247-3 | 19 | $ 4.3232 | ||
| STW25N60M2-EP | ST | TO-247-3 | 0 | $ 9.4229 | ||
| IPW65R190C6 | Infineon | TO-247-3-41 | 0 | $ 1.9211 | ||
| IPW80R280P7XKSA1 | Infineon | TO-247-3-41 | 0 | $ 3.9511 |