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Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi KSD2012GTU
| Producent | |
| Nr części prod. | KSD2012GTU |
| Nr LCSC | C463763 |
| Opak. | TO-220F-3 |
| Numer Klienta | |
| Klucz. cechy | TRANS NPN 60V 3A TO-220F-3 |
| Karta Katalogowa | onsemi KSD2012GTU |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 3 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | TO-220F-3 | |
| Current - Collector Cutoff | 100uA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 25W | |
| Current - Collector(Ic) | 3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 400mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | TO-220F-3 | |
| Current - Collector Cutoff | 100uA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 60V |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 25W | |
| Current - Collector(Ic) | 3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 400mV |
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Na stanie: 8
8 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.6664 | $ 1.67 |
| 10+ | $ 1.4239 | $ 14.24 |
| 30+ | $ 1.2727 | $ 38.18 |
| 100+ | $ 1.1167 | $ 111.67 |
| 500+ | $ 1.0474 | $ 523.70 |
| 1,000+ | $ 1.0175 | $ 1017.50 |
Standardowa Obudowa1000/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | TO-220F-3 | |
| Current - Collector Cutoff | 100uA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 60V | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 25W | |
| Current - Collector(Ic) | 3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 400mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | TO-220F-3 | |
| Current - Collector Cutoff | 100uA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 60V |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 25W | |
| Current - Collector(Ic) | 3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 400mV |
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C463763 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |