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EDA-ModelleEasyEDA
DIODES DMN3026LVT-7
| Hersteller | |
| Herst.-Teilenr. | DMN3026LVT-7 |
| LCSC-Nr. | C461010 |
| Verp. | TSOT-23-6 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 6.6A TSOT-23-6 |
| Datenblatt | DIODES DMN3026LVT-7 |
| RoHS-Konformität | 5 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TSOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 6.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 643pF | |
| Gate Charge(Qg) | 12.5nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TSOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 6.6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 643pF | |
| Gate Charge(Qg) | 12.5nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free, fully RoHS compliant
- Halogen and antimony-free, "green" device
- AEC-Q101 qualified, high reliability
Anwendungen
KI-Übersetzung
- DC-DC Converter
- Power Management
- Backlight Source
Vorrätig: 50
50 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1256 | $ 0.63 |
| 50+ | $ 0.1005 | $ 5.03 |
| 150+ | $ 0.088 | $ 13.20 |
| 500+ | $ 0.0786 | $ 39.30 |
| 3,000+ | $ 0.0711 | $ 213.30 |
| 6,000+ | $ 0.0673 | $ 403.80 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TSOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 6.6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 643pF | |
| Gate Charge(Qg) | 12.5nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TSOT-23-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 6.6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 643pF | |
| Gate Charge(Qg) | 12.5nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free, fully RoHS compliant
- Halogen and antimony-free, "green" device
- AEC-Q101 qualified, high reliability
Anwendungen
KI-Übersetzung
- DC-DC Converter
- Power Management
- Backlight Source
C461010 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SI3438DV-T1-GE3 | VISHAY | TSOP-6 | 48 | $ 0.5264 | ||
| AO6400 | AOS | TSOP-6 | 285 | $ 0.1826 | ||
| SQ3426AEEV-T1_GE3 | VISHAY | TSOP-6 | 3,140 | $ 0.4994 | ||
| SP40N16TS | Siliup | SOT-23-6L | 2,960 | $ 0.0505 | ||
| SQ3418EV-T1_GE3 | VISHAY | TSOP-6 | 84 | $ 1.381 | ||
| HT304N220S | R+O | SOT-23-6L | 4,120 | $ 0.0662 | ||
| SQ3418AEEV-T1_GE3 | VISHAY | TSOP-6-1.5mm | 30 | $ 0.9505 | ||
| DMN3026LVTQ-13 | DIODES | TSOT-26 | 0 | $ 0.3474 | ||
| DMN3026LVTQ-7 | DIODES | TSOT-26 | 0 | $ 0.3474 | ||
| SI3438DV-T1-E3 | VISHAY | TSOP-6-1.5mm | 0 | $ 0.5557 |