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Infineon IRF3205ZLPBF

Produttore
Infineon
Cod. Prod.
IRF3205ZLPBF
Cod. LCSC
C459958
Imballo
TO-262-3
Numero Cliente
Attr. chiave
MOSFET N-CH 55V 75A TO-262-3
Scheda TecnicaInfineon IRF3205ZLPBF
Conformità RoHS1 documenti disponibili
Non disponibile al momento
Minimo: 1Multiplo: 1Unità di vendita: Piece

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreInfineon
ImballoTO-262-3
Output Capacitance(Coss)550pF
Pd - Power Dissipation170W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage55V
Current - Continuous Drain(Id)75A
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.45nF
Gate Charge(Qg)110nC@10V
Vgs±20V
TypeN-Channel
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Descrizione

Traduzione AI

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Caratteristiche

Traduzione AI
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free