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EDA-ModelleEasyEDA
Littelfuse/IXYS IXFP60N25X3
| Hersteller | |
| Herst.-Teilenr. | IXFP60N25X3 |
| LCSC-Nr. | C455172 |
| Verp. | ITO-220AB-3 |
| Kundennummer | |
| Hauptmerkm. | 320W 250V 60A 4.5V 23mΩ@10V 1 N-channel N-Channel ITO-220AB-3 Single FETs, MOSFETs RoHS |
| Datenblatt | Littelfuse/IXYS IXFP60N25X3 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | ITO-220AB-3 | |
| Output Capacitance(Coss) | 645pF | |
| Pd - Power Dissipation | 320W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.61nF | |
| Gate Charge(Qg) | 50nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | ITO-220AB-3 | |
| Output Capacitance(Coss) | 645pF | |
| Pd - Power Dissipation | 320W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 60A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.61nF | |
| Gate Charge(Qg) | 50nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This next-generation MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Industry-standard package
- Low R<sub>DS(ON)</sub> and Q<sub>G</sub>
- Avalanche-rated
- Low package inductance
- High power density
- Easy to install
- Space-saving
Anwendungen
KI-Übersetzung
- Switch-mode and resonant-mode power supplies
- DC-DC converters
- PFC circuits
- AC and DC motor drivers
- Robotics and servo control
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 8.0078 | $ 8.01 |
| 10+ | $ 7.9022 | $ 79.02 |
| 30+ | $ 7.8307 | $ 234.92 |
| 100+ | $ 7.7609 | $ 776.09 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | ITO-220AB-3 | |
| Output Capacitance(Coss) | 645pF | |
| Pd - Power Dissipation | 320W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.61nF | |
| Gate Charge(Qg) | 50nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | ITO-220AB-3 | |
| Output Capacitance(Coss) | 645pF | |
| Pd - Power Dissipation | 320W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 60A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.61nF | |
| Gate Charge(Qg) | 50nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This next-generation MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Industry-standard package
- Low R<sub>DS(ON)</sub> and Q<sub>G</sub>
- Avalanche-rated
- Low package inductance
- High power density
- Easy to install
- Space-saving
Anwendungen
KI-Übersetzung
- Switch-mode and resonant-mode power supplies
- DC-DC converters
- PFC circuits
- AC and DC motor drivers
- Robotics and servo control
C455172 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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