LCSC Electronics logoLCSC Electronics svg logo
Anmelden
USD
Nisshinbo Micro Devices Inc. NJM8513AV-TE1 product image
Abbildung ähnlich

Nisshinbo Micro Devices Inc. NJM8513AV-TE1

Hersteller
Herst.-Teilenr.
NJM8513AV-TE1
LCSC-Nr.
C4370544
Verp.
LSSOP-14-175mil
Kundennummer
Hauptmerkm.
4 80uV 20V/us 108dB 25pA 5.2mA 7MHz LSSOP-14-175mil Instrumentation, Op Amps, Buffer Amps
DatenblattNisshinbo Micro Devices Inc. NJM8513AV-TE1
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 2.5143$ 2.51
200+$ 0.973$ 194.60
500+$ 0.9397$ 469.85
1,000+$ 0.923$ 923.00
Standardgehäuse2000/Full Reel
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
HerstellerNisshinbo Micro Devices Inc.
Verp.LSSOP-14-175mil
Output Current-
Number of Channels4
Vos - Input Offset Voltage80uV
Slew Rate20V/us
Input Offset Current(Ios)6pA
Operating Temperature-40℃~+125℃
Common Mode Rejection Ratio(CMRR)108dB
Ib - Input Bias Current25pA
Input Offset Voltage Drift(Vos TC)1uV/℃
Quiescent Current5.2mA
Gain Bandwidth Product7MHz
FeaturesEMI filtering/RF suppression
Input Voltage Noise Density-
Dual Supply-
Rail to Rail-
Single Supply-

Beschreibung

KI-Übersetzung

The NJM8512/NJM8513 are Dual/Quad high precision JFET input operational amplifier featuring low offset, low offset drift, low bias current, high slew rate, low noise and wide operating temperature range. The precision performance, high speed and low noise make the NJM8512/NJM8513 especially suitable for filter and amplification of high speed and small signal in instruments, automated test equipment, sensors and other precision applications.

Merkmale

KI-Übersetzung
  • Low Input Offset Voltage
  • Low Input Offset Voltage Drift
  • V10 = 400μv max.
  • V10 = 700μv max. (Ta = -40°C to +125°C)
  • ΔV10/ΔT = 5μV/°C max. (Ta = -40°C to +125°C)
  • 100 = 1.3mA/ch typ.
  • SR = 20V/μs typ.
  • ft = 7MHz typ.
  • en = 10nV/√Hz typ. (at f = 1kHz)
  • IB = 80pA max. (at Ta = 25°C)
  • Low Supply Current
  • High Slew Rate
  • Wide Bandwidth
  • Low Noise
  • Low Input Bias Current
  • No Phase Reversal
  • RF noise Immunity
  • Guaranteed Temperature
  • Operating Voltage
  • Package
  • Topr = -40°C to +125°C
  • Vop = ±4.5V to ±16V

Anwendungen

KI-Übersetzung
  • Current Sensor
  • Photodiode Amplification
  • Reference Voltage Circuit
  • Automatic Test Equipment