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EDA-ModelleEasyEDA
VBsemi Elec HAT2226RJ-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | HAT2226RJ-VB |
| LCSC-Nr. | C41370263 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | 650V 4A 4V 60W 2.1Ω@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs |
| Datenblatt | VBsemi Elec HAT2226RJ-VB |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.417nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.417nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- Compliant with RoHS Directive 2002/95/EC
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.6915 | $ 0.69 |
| 200+ | $ 0.2766 | $ 55.32 |
| 500+ | $ 0.2671 | $ 133.55 |
| 1,000+ | $ 0.2623 | $ 262.30 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.417nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 177pF | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.417nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- Compliant with RoHS Directive 2002/95/EC
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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| ZDS020N60TB-VB | VBsemi Elec | SO-8 | 0 | $ 0.6915 |