- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDN5618P
| Producent | |
| Nr części prod. | FDN5618P |
| Nr LCSC | C400792 |
| Opak. | SOT-23-3 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 60V 1.25A SOT-23-3 |
| Karta Katalogowa | onsemi FDN5618P |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 52pF | |
| Pd - Power Dissipation | 500mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.25A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 230mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 430pF | |
| Gate Charge(Qg) | 8.6nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 52pF | |
| Pd - Power Dissipation | 500mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.25A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 230mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 430pF | |
| Gate Charge(Qg) | 8.6nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This 60V P-Channel MOSFET uses high voltage PowerTrench process. It has been optimized for power management applications.
Funkcje
Tłumaczenie AI
- –1.25 A, –60 V
- RDS(ON)=0.170 Ω @ VGS = -10 V
- RDS(ON)=0.230 Ω @ VGS = -4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
Zastosowania
Tłumaczenie AI
- DC-DC converters
- Load switch
- Power management
Na stanie: 42,930
42,930 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.1684 | $ 0.84 |
| 50+ | $ 0.1353 | $ 6.77 |
| 150+ | $ 0.1211 | $ 18.17 |
| 500+ | $ 0.1035 | $ 51.75 |
| 3,000+ | $ 0.0956 | $ 286.80 |
| 6,000+ | $ 0.0909 | $ 545.40 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 52pF | |
| Pd - Power Dissipation | 500mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.25A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 230mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 430pF | |
| Gate Charge(Qg) | 8.6nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 52pF | |
| Pd - Power Dissipation | 500mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.25A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 230mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 430pF | |
| Gate Charge(Qg) | 8.6nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This 60V P-Channel MOSFET uses high voltage PowerTrench process. It has been optimized for power management applications.
Funkcje
Tłumaczenie AI
- –1.25 A, –60 V
- RDS(ON)=0.170 Ω @ VGS = -10 V
- RDS(ON)=0.230 Ω @ VGS = -4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
Zastosowania
Tłumaczenie AI
- DC-DC converters
- Load switch
- Power management
C400792 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| HSS6107 | HUASHUO | SOT-23L | 15,185 | $ 0.1072 | ||
| CMN2309M | Cmos | SOT-23-3L | 2,875 | $0.1020 $0.1073 | ||
| SP60P140T2 | Siliup | SOT-23 | 1,340 | $ 0.0317 | ||
| CB2309 | CBI | SOT-23 | 3,000 | $ 0.041 | ||
| PMV100EPAR-JSM | JSMSEMI | SOT-23 | 2,855 | $ 0.4937 | ||
| HL2309W | R+O | SOT-23-3L | 870 | $ 0.0968 | ||
| YFW2309 | YFW | SOT-23 | 10 | $0.0616 $0.0684 | ||
| FS2309M | FOSAN | SOT-23 | 2,710 | $0.0488 $0.0542 | ||
| SP60P140T1 | Siliup | SOT-23-3L | 3,000 | $ 0.0485 | ||
| DMPH6250S-7(ES) | ElecSuper | SOT-23 | 2,960 | $ 0.1628 |