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Hangzhou Silan Microelectronics SBD20C100F
| Hersteller | Hangzhou Silan MicroelectronicsAsian Brands |
| Herst.-Teilenr. | SBD20C100F |
| LCSC-Nr. | C39186 |
| Verp. | TO-220F-3 |
| Kundennummer | |
| Hauptmerkm. | DIODE SCHOTTKY 100V TO-220F-3 |
| Datenblatt | Hangzhou Silan Microelectronics SBD20C100F |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Hangzhou Silan Microelectronics | |
| Verp. | TO-220F-3 | |
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 850mV@10A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 150A | |
| Current - Rectified | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Hangzhou Silan Microelectronics | |
| Verp. | TO-220F-3 | |
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - Forward(Vf@If) | 850mV@10A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 150A | |
| Current - Rectified | 20A |
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Vorrätig: 15
15 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2691 | $ 1.35 |
| 50+ | $ 0.2169 | $ 10.85 |
| 150+ | $ 0.1915 | $ 28.73 |
| 500+ | $ 0.1597 | $ 79.85 |
| 2,000+ | $ 0.1456 | $ 291.20 |
| 5,000+ | $ 0.1371 | $ 685.50 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Hangzhou Silan Microelectronics | |
| Verp. | TO-220F-3 | |
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 850mV@10A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 150A | |
| Current - Rectified | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | Hangzhou Silan Microelectronics | |
| Verp. | TO-220F-3 | |
| Diode Configuration | 1 Pair Common Cathode | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - Forward(Vf@If) | 850mV@10A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 150A | |
| Current - Rectified | 20A |
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C39186 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SBD20C150F | Hangzhou Silan Microelectronics | TO-220F | 210 | $ 0.2576 | ||
| SBD20C200F | Hangzhou Silan Microelectronics | TO-220F | 0 | $ 0.4549 |