- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
DIODES DMN3008SFG-7
| Produttore | |
| Cod. Prod. | DMN3008SFG-7 |
| Cod. LCSC | C384563 |
| Imballo | PowerDI3333-8 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 30V 62A PowerDI3333-8 |
| Scheda Tecnica | DIODES DMN3008SFG-7 |
| Conformità RoHS | 5 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 62A | |
| Gate Threshold Voltage (Vgs(th)) | 4.4V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 459pF | |
| RDS(on) | 5.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.69nF | |
| Gate Charge(Qg) | 86nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 62A | |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 459pF | |
| RDS(on) | 5.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.69nF | |
| Gate Charge(Qg) | 86nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Low RDS(ON) – Ensures On-State Losses are Minimized
- Small, Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies only 33% of the Board Area Occupied by SO-8 Enabling Smaller End Products
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability
Applicazioni
Traduzione AI
- Backlighting
- Power Management Functions
- DC-DC Converters
Disponibile: 20,565
20,565 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.3236 | $ 1.62 |
| 50+ | $ 0.2528 | $ 12.64 |
| 150+ | $ 0.2224 | $ 33.36 |
| 500+ | $ 0.1845 | $ 92.25 |
| 2,000+ | $ 0.1677 | $ 335.40 |
| 4,000+ | $ 0.1576 | $ 630.40 |
Package Standard2000/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 62A | |
| Gate Threshold Voltage (Vgs(th)) | 4.4V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 459pF | |
| RDS(on) | 5.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.69nF | |
| Gate Charge(Qg) | 86nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | DIODES | |
| Imballo | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 62A | |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 459pF | |
| RDS(on) | 5.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.69nF | |
| Gate Charge(Qg) | 86nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Caratteristiche
Traduzione AI
- Low RDS(ON) – Ensures On-State Losses are Minimized
- Small, Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies only 33% of the Board Area Occupied by SO-8 Enabling Smaller End Products
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability
Applicazioni
Traduzione AI
- Backlighting
- Power Management Functions
- DC-DC Converters
C384563 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| HSBB3006 | HUASHUO | PRPAK-8(3x3) | 2,845 | $ 0.1355 | ||
| DMN3008SFG-13 | DIODES | PowerDI3333-8 | 50 | $ 2.2502 | ||
| DMN3008SFGQ-7 | DIODES | PowerDI-3333-8 | 5 | $ 0.8883 | ||
| IQE050N08NM5ATMA1 | Infineon | TSON-8-EP(3.3x3.3) | 4 | $ 3.1047 | ||
| DMT6007LFGQ-7 | DIODES | PowerDI3333-8 | 35 | $ 1.0604 | ||
| DMN3008SFGQ-13 | DIODES | PowerDI3333-8 | 0 | $ 0.8942 | ||
| DMT35M7LFV-13 | DIODES | PowerDI3333-8 | 0 | $ 0.626 | ||
| DMT35M7LFV-7 | DIODES | PowerDI3333-8 | 0 | $ 0.7229 | ||
| IQE050N08NM5SCATMA1 | Infineon | WHSON-8(3.3x3.3) | 0 | $ 3.2574 | ||
| BSZ050N03MSG | Infineon | TSDSON-8(3.3x3.3) | 0 | $ 0.9086 |