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Infineon IPA60R170CFD7XKSA1
| Hersteller | |
| Herst.-Teilenr. | IPA60R170CFD7XKSA1 |
| LCSC-Nr. | C3289028 |
| Verp. | TO-220-FP |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 600V 8.5A TO-220-FP |
| Datenblatt | Infineon IPA60R170CFD7XKSA1 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220-FP | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 8.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 26W | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220-FP | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 8.5A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 26W | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Type | N-Channel |
Beschreibung
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge, best-in-class reverse recovery charge and improved turn off behavior CoolMOS CFD7 offers highest efficiency in resonant topologies. This new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Merkmale
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge
- Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
- Lowest FOM RDS(on)*Qg and RDS(on)*Eoss
- Best-in-class RDS(on) in SMD and THD packages
Anwendungen
- Soft Switching topologies
- Phase-shift full-bridge (ZVS), LLC Applications – Server, Telecom, EV Charging
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.3433 | $ 3.34 |
| 10+ | $ 2.8771 | $ 28.77 |
| 30+ | $ 2.5995 | $ 77.99 |
| 100+ | $ 2.3189 | $ 231.89 |
| 500+ | $ 2.1892 | $ 1094.60 |
| 1,000+ | $ 2.1303 | $ 2130.30 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220-FP | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 8.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 26W | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220-FP | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 22pF | |
| Current - Continuous Drain(Id) | 8.5A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 26W | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Type | N-Channel |
Beschreibung
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge, best-in-class reverse recovery charge and improved turn off behavior CoolMOS CFD7 offers highest efficiency in resonant topologies. This new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Merkmale
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge
- Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
- Lowest FOM RDS(on)*Qg and RDS(on)*Eoss
- Best-in-class RDS(on) in SMD and THD packages
Anwendungen
- Soft Switching topologies
- Phase-shift full-bridge (ZVS), LLC Applications – Server, Telecom, EV Charging
C3289028 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IPP60R170CFD7 | Infineon | TO-220-3 | 14 | $ 2.5491 | ||
| IPA60R160P7 | Infineon | TO-220-3 | 10 | $ 3.0543 | ||
| WTM20N65CP | WPMtek | TO-220 | 50 | $ 1.4279 | ||
| WTM20N65AP | WPMtek | TO-220 | 49 | $ 1.1387 | ||
| STP25N60M2-EP | ST | TO-220 | 23 | $ 5.6939 | ||
| SP001606042 | Infineon | TO-220 | 0 | $ 1.3039 | ||
| NTP185N60S5H | onsemi | TO-220-3 | 0 | $ 3.9755 | ||
| IPP65R190CFD7AAKSA1 | Infineon | TO-220-3 | 0 | $ 3.3611 | ||
| IPP60R160P7XKSA1 | Infineon | TO-220-3 | 0 | $ 3.7562 | ||
| IXTP20N65X2M | Littelfuse/IXYS | TO-220 | 0 | $ 3.8775 |