MACOM XF1001-SC-0G0T
| Hersteller | |
| Herst.-Teilenr. | XF1001-SC-0G0T |
| LCSC-Nr. | C3280286 |
| Verp. | SOT-89 |
| Kundennummer | |
| Hauptmerkm. | 1W Heterojunction Field Effect Transistor, Current:300mA, Voltage:9V |
| Datenblatt | MACOM XF1001-SC-0G0T |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MACOM | |
| Verp. | SOT-89 | |
| Drain to Source Voltage | 9V | |
| Operating Temperature | -40℃~+85℃ | |
| Current - Continuous Drain(Id) | 300mA | |
| Pd - Power Dissipation | 4.5W |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MACOM | |
| Verp. | SOT-89 | |
| Drain to Source Voltage | 9V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Temperature | -40℃~+85℃ | |
| Current - Continuous Drain(Id) | 300mA | |
| Pd - Power Dissipation | 4.5W |
Beschreibung
XF1001-SC is a high-linearity Heterojunction Field Effect Transistor (HFET) in an industry-standard SOT-89 package. The device achieves optimum performance when biased at a drain voltage of 8V and a drain current of 300mA. At this bias point, the device delivers P1dB greater than 30 dBm and OIP3 greater than 46 dBm. The XF1001-SC is suitable for applications up to 6 GHz, with a gain of 10 dB at this frequency.
Merkmale
- Gain:
- 15.5 dB at 1.9 GHz
- 10.0 dB at 5.8 GHz
- Output IP3: 46.5 dBm
- P1dB: 30.0 dBm
- SOT-89 SMT package
- RoHS compliant
Anwendungen
- Wireless networking and communications
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 9.1556 | $ 9.16 |
| 200+ | $ 3.5442 | $ 708.84 |
| 500+ | $ 3.4196 | $ 1709.80 |
| 1,000+ | $ 3.358 | $ 3358.00 |
Standardgehäuse1000/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MACOM | |
| Verp. | SOT-89 | |
| Drain to Source Voltage | 9V | |
| Operating Temperature | -40℃~+85℃ | |
| Current - Continuous Drain(Id) | 300mA | |
| Pd - Power Dissipation | 4.5W |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MACOM | |
| Verp. | SOT-89 | |
| Drain to Source Voltage | 9V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Temperature | -40℃~+85℃ | |
| Current - Continuous Drain(Id) | 300mA | |
| Pd - Power Dissipation | 4.5W |
Beschreibung
XF1001-SC is a high-linearity Heterojunction Field Effect Transistor (HFET) in an industry-standard SOT-89 package. The device achieves optimum performance when biased at a drain voltage of 8V and a drain current of 300mA. At this bias point, the device delivers P1dB greater than 30 dBm and OIP3 greater than 46 dBm. The XF1001-SC is suitable for applications up to 6 GHz, with a gain of 10 dB at this frequency.
Merkmale
- Gain:
- 15.5 dB at 1.9 GHz
- 10.0 dB at 5.8 GHz
- Output IP3: 46.5 dBm
- P1dB: 30.0 dBm
- SOT-89 SMT package
- RoHS compliant
Anwendungen
- Wireless networking and communications
C3280286 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |