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EDA 모델EasyEDA
onsemi FDME905PT
| 제조업체 | |
| 제조사 품번 | FDME905PT |
| LCSC 번호 | C328028 |
| 포장 | SMD |
| 고객 번호 | |
| 주요 제원 | P-Channel MOSFET, Current: -8A, Breakdown Voltage: -12V |
| 데이터시트 | onsemi FDME905PT |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 2 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | SMD | |
| Output Capacitance(Coss) | 525pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF | |
| RDS(on) | 97mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | SMD | |
| Output Capacitance(Coss) | 525pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 8A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF | |
| RDS(on) | 97mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This device is designed for battery charging or load switching in cellular phones and other ultra-portable applications. It incorporates MOSFETs with low on-resistance. The MicroFET 1.6x1.6 Thin package offers excellent thermal performance for its physical footprint, making it ideal for switching and linear mode applications.
주요 특징
AI 번역
- Maximum rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
- Maximum rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
- Maximum rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
- Low profile: new MicroFET 1.6x1.6 Thin package with maximum thickness of 0.55 mm
- Halogen-free and antimony oxide-free
- RoHS compliant
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 0.2978 | $ 0.30 |
| 10+ | $ 0.2917 | $ 2.92 |
| 30+ | $ 0.2871 | $ 8.61 |
| 100+ | $ 0.284 | $ 28.40 |
표준 패키지5000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | SMD | |
| Output Capacitance(Coss) | 525pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF | |
| RDS(on) | 97mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | SMD | |
| Output Capacitance(Coss) | 525pF | |
| Pd - Power Dissipation | 2.1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 8A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF | |
| RDS(on) | 97mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 20nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This device is designed for battery charging or load switching in cellular phones and other ultra-portable applications. It incorporates MOSFETs with low on-resistance. The MicroFET 1.6x1.6 Thin package offers excellent thermal performance for its physical footprint, making it ideal for switching and linear mode applications.
주요 특징
AI 번역
- Maximum rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
- Maximum rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
- Maximum rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
- Low profile: new MicroFET 1.6x1.6 Thin package with maximum thickness of 0.55 mm
- Halogen-free and antimony oxide-free
- RoHS compliant
C328028 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| DMP2021UTSQ-13 | DIODES | SMD | 2,269 | $ 0.5462 | ||
| SI7655DN-T1-GE3 | VISHAY | SMD | 2,773 | $ 1.0037 |