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onsemi MTP8N50E

Hersteller
onsemi
Herst.-Teilenr.
MTP8N50E
LCSC-Nr.
C3276609
Verp.
-
Kundennummer
Hauptmerkm.
N-Channel, Current:8.0A, Voltage:500V
Datenblattonsemi MTP8N50E
Derzeit nicht verfügbar
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Herstelleronsemi
Verp.-
Operating Temperature-55℃~+150℃
Drain to Source Voltage500V
Output Capacitance(Coss)246pF
Current - Continuous Drain(Id)8A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
RDS(on)800mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)144pF
Input Capacitance(Ciss)1.68nF
Gate Charge(Qg)64nC@10V
TypeN-Channel
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Beschreibung

KI-Übersetzung

This high-voltage MOSFET employs an advanced termination scheme to enhance voltage blocking capability without degradation over time. In addition, this advanced TMOS E-FET is designed to withstand high energy in avalanche and commutation modes. This new energy-efficient design also features a drain-source diode with fast recovery time. The device is designed for low-voltage, high-speed switching applications in power supplies, converters, and PWM motor control — particularly suited for bridge circuits with stringent requirements on diode speed and commutation SOA, while providing additional safety margin against accidental voltage transients.

Merkmale

KI-Übersetzung
  • Rugged high-voltage termination
  • Specified avalanche energy
  • Source-drain diode recovery time comparable to discrete fast-recovery diodes
  • Diode suitable for bridge circuits
  • IDSS and VDS(on) specified at elevated temperature

Anwendungen

KI-Übersetzung
  • Power Supply
  • Converters
  • PWM Motor Control
  • Bridge Circuits