MICROCHIP APT46GA90JD40
| Hersteller | |
| Herst.-Teilenr. | APT46GA90JD40 |
| LCSC-Nr. | C3191192 |
| Verp. | SOT-227-4 |
| Kundennummer | |
| Hauptmerkm. | 284W 46A 900V PT (Punch-Through) SOT-227-4 IGBT Modules RoHS |
| Datenblatt | MICROCHIP APT46GA90JD40 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Hersteller | MICROCHIP | |
| Verp. | SOT-227-4 | |
| Td(off) | 153ns | |
| Pd - Power Dissipation | 284W | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 46A | |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | |
| Reverse Transfer Capacitance (Cres) | 63pF | |
| IGBT Type | PT (Punch-Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V | |
| Gate Charge(Qg) | 698nC@15V | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Reverse Recovery Time(trr) | 250ns | |
| Switching Energy(Eoff) | 1.222mJ | |
| Turn-On Energy (Eon) | 1.726mJ | |
| Operating Temperature | -55℃~+150℃ | |
| Input Capacitance(Cies) | 4.17nF | |
| Output Capacitance(Coes) | 438pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Hersteller | MICROCHIP | |
| Verp. | SOT-227-4 | |
| Td(off) | 153ns | |
| Pd - Power Dissipation | 284W | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 46A | |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | |
| Reverse Transfer Capacitance (Cres) | 63pF | |
| IGBT Type | PT (Punch-Through) |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V | |
| Gate Charge(Qg) | 698nC@15V | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Reverse Recovery Time(trr) | 250ns | |
| Switching Energy(Eoff) | 1.222mJ | |
| Turn-On Energy (Eon) | 1.726mJ | |
| Operating Temperature | -55℃~+150℃ | |
| Input Capacitance(Cies) | 4.17nF | |
| Output Capacitance(Coes) | 438pF |
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 81.3764 | $ 81.38 |
| 200+ | $ 31.4921 | $ 6298.42 |
| 500+ | $ 30.3858 | $ 15192.90 |
| 1,000+ | $ 29.838 | $ 29838.00 |
Standardgehäuse1/Full Tube | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Hersteller | MICROCHIP | |
| Verp. | SOT-227-4 | |
| Td(off) | 153ns | |
| Pd - Power Dissipation | 284W | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 46A | |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | |
| Reverse Transfer Capacitance (Cres) | 63pF | |
| IGBT Type | PT (Punch-Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V | |
| Gate Charge(Qg) | 698nC@15V | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Reverse Recovery Time(trr) | 250ns | |
| Switching Energy(Eoff) | 1.222mJ | |
| Turn-On Energy (Eon) | 1.726mJ | |
| Operating Temperature | -55℃~+150℃ | |
| Input Capacitance(Cies) | 4.17nF | |
| Output Capacitance(Coes) | 438pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Hersteller | MICROCHIP | |
| Verp. | SOT-227-4 | |
| Td(off) | 153ns | |
| Pd - Power Dissipation | 284W | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 46A | |
| Collector-Emitter Breakdown Voltage (Vces) | 900V | |
| Reverse Transfer Capacitance (Cres) | 63pF | |
| IGBT Type | PT (Punch-Through) |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V | |
| Gate Charge(Qg) | 698nC@15V | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Reverse Recovery Time(trr) | 250ns | |
| Switching Energy(Eoff) | 1.222mJ | |
| Turn-On Energy (Eon) | 1.726mJ | |
| Operating Temperature | -55℃~+150℃ | |
| Input Capacitance(Cies) | 4.17nF | |
| Output Capacitance(Coes) | 438pF |
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C3191192 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IXYN110N120A4 | Littelfuse/IXYS | SOT-227B | 3 | $ 52.0749 | ||
| IXGN50N120C3H1 | Littelfuse | SOT-227B | 0 | $ 9.4617 | ||
| APT40GP90J | MICROCHIP | SOT-227B-4 | 0 | $ 104.2594 | ||
| IXYN100N120B3H1 | Littelfuse/IXYS | SOT-227B | 0 | $ 54.486 | ||
| IXGN82N120B3H1 | Littelfuse | SOT-227B | 0 | $ 11.5537 | ||
| IXGN82N120C3H1 | Littelfuse/IXYS | SOT-227B | 0 | $ 80.3787 | ||
| IXYN50N170CV1 | Littelfuse/IXYS | SOT-227B | 0 | $ 76.9229 | ||
| IXYN80N90C3H1 | Littelfuse/IXYS | SOT-227B | 0 | $ 42.2104 | ||
| IXYN100N120C3H1 | Littelfuse/IXYS | SOT-227B | 0 | $ 115.6619 | ||
| VS-GT55NA120UX | VISHAY | SOT-227 | 0 | $ 31.8657 |

