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Modelli EDAEasyEDA
ST STL12N60M2
| Produttore | |
| Cod. Prod. | STL12N60M2 |
| Cod. LCSC | C2970646 |
| Imballo | VDFN-8-Power |
| Numero Cliente | |
| Attr. chiave | N-channel, Current: 6.5A, Voltage: 600V |
| Scheda Tecnica | ST STL12N60M2 |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | VDFN-8-Power | |
| Output Capacitance(Coss) | 29pF | |
| Pd - Power Dissipation | 52W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| RDS(on) | 495mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 538pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | VDFN-8-Power | |
| Output Capacitance(Coss) | 29pF | |
| Pd - Power Dissipation | 52W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6.5A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| RDS(on) | 495mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 538pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This device is an N-channel power MOSFET developed using MDmesh™ M2 technology. Benefiting from its stripe layout and improved vertical structure, the device features low on-resistance and optimized switching characteristics, making it suitable for high-efficiency converters with demanding requirements.
Caratteristiche
Traduzione AI
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protection
Applicazioni
Traduzione AI
- Switching applications
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 4.4093 | $ 4.41 |
| 10+ | $ 4.3427 | $ 43.43 |
| 30+ | $ 4.3004 | $ 129.01 |
| 100+ | $ 4.2566 | $ 425.66 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | VDFN-8-Power | |
| Output Capacitance(Coss) | 29pF | |
| Pd - Power Dissipation | 52W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| RDS(on) | 495mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 538pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | VDFN-8-Power | |
| Output Capacitance(Coss) | 29pF | |
| Pd - Power Dissipation | 52W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6.5A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| RDS(on) | 495mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 538pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This device is an N-channel power MOSFET developed using MDmesh™ M2 technology. Benefiting from its stripe layout and improved vertical structure, the device features low on-resistance and optimized switching characteristics, making it suitable for high-efficiency converters with demanding requirements.
Caratteristiche
Traduzione AI
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protection
Applicazioni
Traduzione AI
- Switching applications
C2970646 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| STL18N60M2 | ST | VDFN-8-Power | 100 | $ 4.1542 | ||
| STL18N65M2 | ST | VDFN-8-Power | 692 | $ 1.0924 | ||
| STL15N65M5 | ST | VDFN-8-Power | 739 | $ 2.2663 | ||
| STL13N60DM2 | ST | VDFN-8-Power | 20 | $ 5.0315 | ||
| STL11N65M5 | ST | VDFN-8-Power | 10 | $ 5.3516 | ||
| STL19N60M2 | ST | VDFN-8 | 14 | $ 2.5946 | ||
| STL18N65M5 | ST | VDFN-8-Power | 3 | $ 5.784 | ||
| STL13N65M2 | ST | VDFN-8-Power | 0 | $ 3.0722 | ||
| STL12N60M6 | ST | VDFN-8-Power | 0 | $ 2.2514 | ||
| STL19N60M6 | ST | PowerVDFN-8 | 0 | $ 2.4534 |