Abbildung ähnlich
EDA-ModelleEasyEDA
ST STGWA40HP65FB2
| Hersteller | |
| Herst.-Teilenr. | STGWA40HP65FB2 |
| LCSC-Nr. | C2970569 |
| Verp. | TO-247 |
| Kundennummer | |
| Hauptmerkm. | 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package |
| Datenblatt | ST STGWA40HP65FB2 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Td(off) | 125ns | |
| Pd - Power Dissipation | 230W | |
| Td(on) | - | |
| Current - Collector(Ic) | 72A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 64pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 140ns | |
| Switching Energy(Eoff) | 410uJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.3nF | |
| Gate Charge(Qg) | 153nC@15V | |
| Output Capacitance(Coes) | 122pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Td(off) | 125ns | |
| Pd - Power Dissipation | 230W | |
| Td(on) | - | |
| Current - Collector(Ic) | 72A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 64pF | |
| IGBT Type | FS (Field Stop) |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 140ns | |
| Switching Energy(Eoff) | 410uJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.3nF | |
| Gate Charge(Qg) | 153nC@15V | |
| Output Capacitance(Coes) | 122pF |
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Anwendungen
KI-Übersetzung
- Welding Power factor correction
Vorrätig: 17
17 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 4.5425 | $ 4.54 |
| 10+ | $ 4.458 | $ 44.58 |
| 30+ | $ 4.4012 | $ 132.04 |
| 90+ | $ 4.3443 | $ 390.99 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Td(off) | 125ns | |
| Pd - Power Dissipation | 230W | |
| Td(on) | - | |
| Current - Collector(Ic) | 72A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 64pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 140ns | |
| Switching Energy(Eoff) | 410uJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.3nF | |
| Gate Charge(Qg) | 153nC@15V | |
| Output Capacitance(Coes) | 122pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Td(off) | 125ns | |
| Pd - Power Dissipation | 230W | |
| Td(on) | - | |
| Current - Collector(Ic) | 72A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 64pF | |
| IGBT Type | FS (Field Stop) |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 140ns | |
| Switching Energy(Eoff) | 410uJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.3nF | |
| Gate Charge(Qg) | 153nC@15V | |
| Output Capacitance(Coes) | 122pF |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Anwendungen
KI-Übersetzung
- Welding Power factor correction
C2970569 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| STGWA40H65DFB2 | ST | TO-247 | 8 | $ 5.0286 | ||
| STGWA50HP65FB2 | ST | TO-247 | 8 | $ 3.9511 | ||
| GWA40MS120DF4AG | ST | TO-247 | 15 | $ 7.6666 | ||
| MLG30T65FUL | Minos | TO-247 | 590 | $ 1.1972 | ||
| MLG30T65FDL | Minos | TO-247 | 285 | $ 1.4103 | ||
| MLG40T65FDK | Minos | TO-247 | 280 | $ 1.2758 | ||
| STGWA40IH65DF | ST | TO-247-3 | 20 | $ 8.2889 | ||
| MLG60T65FDK | Minos | TO-247 | 415 | $2.0864 $2.1962 | ||
| SPT50N65F1A1 | SPTECH | TO-247-3 | 85 | $1.9833 $2.0876 | ||
| IKW50N65H5 | SPTECH | TO-247-3 | 20 | $2.0611 $2.1695 |