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Modelli EDAEasyEDA
ST STGW19NC60HD
| Produttore | |
| Cod. Prod. | STGW19NC60HD |
| Cod. LCSC | C2965488 |
| Imballo | TO-247 |
| Numero Cliente | |
| Attr. chiave | IGBT 600V 42A TO-247 |
| Scheda Tecnica | ST STGW19NC60HD |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | ST | |
| Imballo | TO-247 | |
| Pd - Power Dissipation | 140W | |
| Td(off) | 97ns | |
| Td(on) | 25ns | |
| Current - Collector(Ic) | 42A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 36pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@250uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V@12A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 31ns | |
| Switching Energy(Eoff) | 189uJ | |
| Turn-On Energy (Eon) | 85uJ | |
| Input Capacitance(Cies) | 1.18nF | |
| Output Capacitance(Coes) | 130pF | |
| Gate Charge(Qg) | 53nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | ST | |
| Imballo | TO-247 | |
| Pd - Power Dissipation | 140W | |
| Td(off) | 97ns | |
| Td(on) | 25ns | |
| Current - Collector(Ic) | 42A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 36pF | |
| IGBT Type | - |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@250uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V@12A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 31ns | |
| Switching Energy(Eoff) | 189uJ | |
| Turn-On Energy (Eon) | 85uJ | |
| Input Capacitance(Cies) | 1.18nF | |
| Output Capacitance(Coes) | 130pF | |
| Gate Charge(Qg) | 53nC |
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Descrizione
Traduzione AI
These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Caratteristiche
Traduzione AI
- Low on-voltage drop (VCE(sat))
- Very soft ultrafast recovery anti-parallel diode
Applicazioni
Traduzione AI
- High frequency motor drives
- SMPS and PFC in both hard switch and resonant topologies
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 2.9504 | $ 2.95 |
| 10+ | $ 2.6108 | $ 26.11 |
| 30+ | $ 2.398 | $ 71.94 |
| 100+ | $ 2.1803 | $ 218.03 |
| 500+ | $ 2.0828 | $ 1041.40 |
| 1,000+ | $ 2.0406 | $ 2040.60 |
Package Standard30/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | ST | |
| Imballo | TO-247 | |
| Pd - Power Dissipation | 140W | |
| Td(off) | 97ns | |
| Td(on) | 25ns | |
| Current - Collector(Ic) | 42A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 36pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@250uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V@12A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 31ns | |
| Switching Energy(Eoff) | 189uJ | |
| Turn-On Energy (Eon) | 85uJ | |
| Input Capacitance(Cies) | 1.18nF | |
| Output Capacitance(Coes) | 130pF | |
| Gate Charge(Qg) | 53nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | ST | |
| Imballo | TO-247 | |
| Pd - Power Dissipation | 140W | |
| Td(off) | 97ns | |
| Td(on) | 25ns | |
| Current - Collector(Ic) | 42A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 36pF | |
| IGBT Type | - |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.75V@250uA | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.5V@12A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 31ns | |
| Switching Energy(Eoff) | 189uJ | |
| Turn-On Energy (Eon) | 85uJ | |
| Input Capacitance(Cies) | 1.18nF | |
| Output Capacitance(Coes) | 130pF | |
| Gate Charge(Qg) | 53nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Caratteristiche
Traduzione AI
- Low on-voltage drop (VCE(sat))
- Very soft ultrafast recovery anti-parallel diode
Applicazioni
Traduzione AI
- High frequency motor drives
- SMPS and PFC in both hard switch and resonant topologies
C2965488 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
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|---|---|---|---|---|---|---|
| AOK40B65H2AL | AOS | TO-247 | 2,299 | $ 1.8631 | ||
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| APT27GA90BD15 | MICROCHIP | TO-247 | 0 | $ 13.6912 | ||
| FGH60T65SHD-F155 | onsemi | TO-247-3 | 0 | $ 7.1565 | ||
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