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EDA-ModelleEasyEDA
ALLPOWER AP80N04G
| Hersteller | ALLPOWERAsian Brands |
| Herst.-Teilenr. | AP80N04G |
| LCSC-Nr. | C2840977 |
| Verp. | PDFN-8(4.9x5.8) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 40V 50A PDFN-8(4.9x5.8) |
| Datenblatt | ALLPOWER AP80N04G |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ALLPOWER | |
| Verp. | PDFN-8(4.9x5.8) | |
| Output Capacitance(Coss) | 187pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 167pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.229nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ALLPOWER | |
| Verp. | PDFN-8(4.9x5.8) | |
| Output Capacitance(Coss) | 187pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 167pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.229nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
GT080N10 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- 40V, 50A
- RDs(On) = 5.9mΩ (Typ.) @ VGs = 10V
- RDs(On) = 11mΩ (Typ.) @ VGs = 4.5V
- High Density Cell Design for Ultra Low RDs(On)
- Fully Characterized Avalanche Voltage and Current
- Good Stability and Uniformity with High EAs
- Excellent Package for Good Heat Dissipation
Anwendungen
KI-Übersetzung
- Load Switch
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Vorrätig: 1,010
1,010 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.3919 | $ 1.96 |
| 50+ | $ 0.2968 | $ 14.84 |
| 150+ | $ 0.2561 | $ 38.42 |
| 500+ | $ 0.2053 | $ 102.65 |
| 2,500+ | $ 0.1826 | $ 456.50 |
| 4,000+ | $ 0.1691 | $ 676.40 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ALLPOWER | |
| Verp. | PDFN-8(4.9x5.8) | |
| Output Capacitance(Coss) | 187pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 167pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.229nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ALLPOWER | |
| Verp. | PDFN-8(4.9x5.8) | |
| Output Capacitance(Coss) | 187pF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 167pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.229nF | |
| Gate Charge(Qg) | 48nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
GT080N10 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- 40V, 50A
- RDs(On) = 5.9mΩ (Typ.) @ VGs = 10V
- RDs(On) = 11mΩ (Typ.) @ VGs = 4.5V
- High Density Cell Design for Ultra Low RDs(On)
- Fully Characterized Avalanche Voltage and Current
- Good Stability and Uniformity with High EAs
- Excellent Package for Good Heat Dissipation
Anwendungen
KI-Übersetzung
- Load Switch
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
C2840977 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| AP85N04G | ALLPOWER | TDSON-8(5.2x5.9) | 865 | $ 0.2828 | ||
| APG095N01G | ALLPOWER | PDFN-8(5x6) | 4,860 | $ 0.4805 | ||
| AP90N04G | ALLPOWER | PDFN-8(5x6) | 1,295 | $ 0.6105 | ||
| APG077N01G | ALLPOWER | PDFN-8(5x6) | 36,473 | $ 0.6138 | ||
| AP68N06G | ALLPOWER | PDFN-8(5x6) | 11,500 | $ 0.2826 | ||
| APG022N06G | ALLPOWER | PDFN5x6-8 | 2,029 | $ 1.7757 | ||
| APG046N01G | ALLPOWER | PDFN5x6-8L | 475 | $ 1.1361 | ||
| APG070N12G | ALLPOWER | PDFN-8(5x6) | 1,210 | $ 1.3966 | ||
| APG038N01G | ALLPOWER | PDFN5x6-8 | 3,523 | $ 1.3949 | ||
| APG032N04G | ALLPOWER | PDFN5x6-8 | 60 | $ 0.6479 |