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EDA-ModelleEasyEDA
DIODES DDC144TU-7
| Hersteller | |
| Herst.-Teilenr. | DDC144TU-7 |
| LCSC-Nr. | C2760652 |
| Verp. | SOT-363 |
| Kundennummer | |
| Hauptmerkm. | TRANS PREBIAS 50V SOT-363 |
| Datenblatt | DIODES DDC144TU-7 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | DIODES | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 150 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 250mV | |
| Input Resistor | 47kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 950mV | |
| Current - Collector(Ic) | 50mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | DIODES | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 150 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 250mV |
| Typ | Beschreibung | |
|---|---|---|
| Input Resistor | 47kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 950mV | |
| Current - Collector(Ic) | 50mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
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Beschreibung
KI-Übersetzung
DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. NPN transistors can be used as a control and also these can be biased using higher supply voltages due to the built in current limiting base resistor of 47 K Ohm. The component devices can be used as a part of a circuit or as a stand alone discrete device.
Merkmale
KI-Übersetzung
- Built in Base Resistors
- Epitaxial Planar Die Construction
- Lead Free By Design/RoHS Compliant
- "Green" Device
Anwendungen
KI-Übersetzung
- logic switching applications
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1418 | $ 0.71 |
| 50+ | $ 0.1202 | $ 6.01 |
| 150+ | $ 0.1094 | $ 16.41 |
| 500+ | $ 0.1013 | $ 50.65 |
| 3,000+ | $ 0.0948 | $ 284.40 |
| 6,000+ | $ 0.0915 | $ 549.00 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | DIODES | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 150 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 250mV | |
| Input Resistor | 47kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 950mV | |
| Current - Collector(Ic) | 50mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | DIODES | |
| Verp. | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 150 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 250mV |
| Typ | Beschreibung | |
|---|---|---|
| Input Resistor | 47kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 950mV | |
| Current - Collector(Ic) | 50mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. NPN transistors can be used as a control and also these can be biased using higher supply voltages due to the built in current limiting base resistor of 47 K Ohm. The component devices can be used as a part of a circuit or as a stand alone discrete device.
Merkmale
KI-Übersetzung
- Built in Base Resistors
- Epitaxial Planar Die Construction
- Lead Free By Design/RoHS Compliant
- "Green" Device
Anwendungen
KI-Übersetzung
- logic switching applications
C2760652 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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