VISHAY SIC521ACD-T1-GE3

The SiC521 and SiC521A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 4.5 mm×3.5 mm MLF package, SiC521 and SiC521A enable voltage regulator designs to deliver up to 30 A continuous current per phase. The internal power MOSFETs utilize Vishay’s state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. The SiC521 and SiC521A incorporate an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, and zero current detect to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers, support tri-state PWM, and 3.3 V (SiC521A) / 5 V (SiC521) PWM logic.

• Thermally enhanced PowerPAK MLP4535-22 L package RoHS
• Vishay’s Gen IV MOSFET technology and a COMPLIANT low-side MOSFET with integrated Schottky HALOGEN FREE diode
• Delivers up to 30 A continuous current, 40 A at 10 ms peak current
• 95 % peak efficiency
• High frequency operation up to 1.5 MHz
• Power MOSFETs optimized for 12V input stage
• 3.3 V (SiC521A) / 5 V (SiC521) PWM logic with tri-state and hold-off
• Zero current detect control for light load efficiency improvement
• Low PWM propagation delay (<20 ns)
• Under voltage lockout for VCIN

• Multi-phase VRDs for CPU, GPU, and memory
• Synchronous buck converters
• DC/DC VR modules