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Infineon IRFP3415PBF
| Produttore | |
| Cod. Prod. | IRFP3415PBF |
| Cod. LCSC | C2615 |
| Imballo | TO-247AC |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 150V 43A TO-247AC |
| Scheda Tecnica | Infineon IRFP3415PBF |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247AC | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 640pF | |
| Current - Continuous Drain(Id) | 43A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.4nF | |
| Gate Charge(Qg) | 200nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247AC | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 640pF | |
| Current - Continuous Drain(Id) | 43A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.4nF | |
| Gate Charge(Qg) | 200nC@10V | |
| Type | N-Channel |
Descrizione
Fifth Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Caratteristiche
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.7722 | $ 1.77 |
| 10+ | $ 1.6335 | $ 16.34 |
| 30+ | $ 1.5453 | $ 46.36 |
| 100+ | $ 1.4572 | $ 145.72 |
| 500+ | $ 1.4164 | $ 708.20 |
| 1,000+ | $ 1.3985 | $ 1398.50 |
Package Standard25/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247AC | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 640pF | |
| Current - Continuous Drain(Id) | 43A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.4nF | |
| Gate Charge(Qg) | 200nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247AC | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 640pF | |
| Current - Continuous Drain(Id) | 43A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.4nF | |
| Gate Charge(Qg) | 200nC@10V | |
| Type | N-Channel |
Descrizione
Fifth Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Caratteristiche
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
C2615 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| SP50MF65TF | Siliup | TO-247 | 80 | $3.1076 $3.8845 | ||
| IXTQ60N20T-JSM | JSMSEMI | TO-247 | 65 | $1.5673 $1.6497 | ||
| TSK50N30M | Truesemi | TO-247 | 79 | $ 2.9029 | ||
| IRFP4227PBF-JSM | JSMSEMI | TO-247 | 547 | $1.6135 $1.6984 | ||
| FDA59N25-JSM | JSMSEMI | TO-247 | 63 | $1.4798 $1.5576 | ||
| IRFP4232PBF-OSEN | OSEN | TO-247S | 30 | $ 2.3288 | ||
| IRFP4568PBF(TOKMAS) | Tokmas | TO-247 | 174 | $ 1.7818 | ||
| FQA40N25-JSM | JSMSEMI | TO-247 | 57 | $1.7688 $1.8618 | ||
| STW75NF20 | ST | TO-247-3 | 0 | $ 8.2011 | ||
| IPW60R045P7 | Infineon | TO-247-3 | 0 | $ 7.8047 |