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Modele EDAEasyEDA
GeneSiC Semiconductor MSRTA200140D
| Producent | |
| Nr części prod. | MSRTA200140D |
| Nr LCSC | C20907239 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | 1 Pair Series Connection 200A 1.4kV 1.1V@200A Diode Arrays RoHS |
| Karta Katalogowa | GeneSiC Semiconductor MSRTA200140D |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | GeneSiC Semiconductor | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 3kA | |
| Diode Configuration | 1 Pair Series Connection | |
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 1.4kV | |
| Voltage - Forward(Vf@If) | 1.1V@200A | |
| Reverse Leakage Current (Ir) | 10uA@1400V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | GeneSiC Semiconductor | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 3kA | |
| Diode Configuration | 1 Pair Series Connection |
| Typ | Opis | |
|---|---|---|
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 1.4kV | |
| Voltage - Forward(Vf@If) | 1.1V@200A | |
| Reverse Leakage Current (Ir) | 10uA@1400V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- High surge capability
- Types: VRRM from 1200 V to 1600 V
- Isolated package
- Electrically isolated substrate
- Non-ESD sensitive
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 136.0432 | $ 136.04 |
| 192+ | $ 54.2834 | $ 10422.41 |
| 504+ | $ 52.4682 | $ 26443.97 |
| 1,008+ | $ 51.573 | $ 51985.58 |
Standardowa Obudowa24/Full Bag | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | GeneSiC Semiconductor | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 3kA | |
| Diode Configuration | 1 Pair Series Connection | |
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 1.4kV | |
| Voltage - Forward(Vf@If) | 1.1V@200A | |
| Reverse Leakage Current (Ir) | 10uA@1400V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | GeneSiC Semiconductor | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 3kA | |
| Diode Configuration | 1 Pair Series Connection |
| Typ | Opis | |
|---|---|---|
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 1.4kV | |
| Voltage - Forward(Vf@If) | 1.1V@200A | |
| Reverse Leakage Current (Ir) | 10uA@1400V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- High surge capability
- Types: VRRM from 1200 V to 1600 V
- Isolated package
- Electrically isolated substrate
- Non-ESD sensitive
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |