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Modelli EDAEasyEDA
TI CSD16411Q3
| Produttore | |
| Cod. Prod. | CSD16411Q3 |
| Cod. LCSC | C201964 |
| Imballo | VSON-CLIP-8(3.3x3.3) |
| Numero Cliente | |
| Attr. chiave | 35W 25V 60A 2.3V 12mΩ@4.5V 1 N-channel N-Channel VSON-CLIP-8(3.3x3.3) Single FETs, MOSFETs RoHS |
| Scheda Tecnica | TI CSD16411Q3 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | VSON-CLIP-8(3.3x3.3) | |
| Output Capacitance(Coss) | 330pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 570pF | |
| Gate Charge(Qg) | 2.9nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | VSON-CLIP-8(3.3x3.3) | |
| Output Capacitance(Coss) | 330pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 60A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 570pF | |
| Gate Charge(Qg) | 2.9nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This 25V, 8mΩ, 3.3mm × 3.3mm SON power MOSFET is designed to minimize losses in power conversion applications.
Caratteristiche
Traduzione AI
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- SON 3.3mm × 3.3mm plastic package
Applicazioni
Traduzione AI
- Point-of-load synchronous buck converter for networking, telecom, and computing system applications
- Optimized for control FET applications
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 2.026 | $ 2.03 |
| 10+ | $ 1.779 | $ 17.79 |
| 30+ | $ 1.6425 | $ 49.28 |
| 100+ | $ 1.4898 | $ 148.98 |
| 500+ | $ 1.3452 | $ 672.60 |
| 1,000+ | $ 1.3144 | $ 1314.40 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | VSON-CLIP-8(3.3x3.3) | |
| Output Capacitance(Coss) | 330pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 570pF | |
| Gate Charge(Qg) | 2.9nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | VSON-CLIP-8(3.3x3.3) | |
| Output Capacitance(Coss) | 330pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 60A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 570pF | |
| Gate Charge(Qg) | 2.9nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This 25V, 8mΩ, 3.3mm × 3.3mm SON power MOSFET is designed to minimize losses in power conversion applications.
Caratteristiche
Traduzione AI
- Ultra-low Qg and Qgd
- Low thermal resistance
- Avalanche rated
- Lead-free terminal plating
- RoHS compliant
- Halogen-free
- SON 3.3mm × 3.3mm plastic package
Applicazioni
Traduzione AI
- Point-of-load synchronous buck converter for networking, telecom, and computing system applications
- Optimized for control FET applications
C201964 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NTTFS4C06NTAG | onsemi | WDFN-8(3.3x3.3) | 1,395 | $ 0.2364 | ||
| NTTFS4C06NTWG | onsemi | WDFN-8(3.3x3.3) | 7 | $ 2.541 | ||
| NTTFS4C05NTAG | onsemi | PDFN-8(3.3x3.3) | 833 | $ 0.4835 | ||
| BSZ0503NSI | Infineon | TSDSON-8-EP(3.3x3.3) | 25 | $ 1.5077 | ||
| WNM3057-8/TR | WILLSEMI | PDFN3333-8L | 2,498 | $ 0.5474 | ||
| SISS26LDN-T1-GE3 | VISHAY | PowerPAK1212-8S | 34 | $ 2.0043 | ||
| MU4006X | MIRACLE POWER | DFN-8(3.3x3.3) | 5,000 | $0.2147 $0.226 | ||
| SISS52DN-T1-GE3 | VISHAY | PowerPAK1212-8SH | 0 | $ 3.2672 | ||
| NTTFS4H07NTWG | onsemi | WDFN-8(3.3x3.3) | 0 | $ 0.6958 | ||
| IRFHM8337TRPBF-IR | Infineon | PQFN-8(3.3x3.3) | 0 | $ 0.1767 |