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EDA-ModelleEasyEDA
AGMSEMI AGM30P35S
| Hersteller | AGMSEMIAsian Brands |
| Herst.-Teilenr. | AGM30P35S |
| LCSC-Nr. | C19633865 |
| Verp. | SOP-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 30V 6A SOP-8 |
| Datenblatt | AGMSEMI AGM30P35S |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 34.5mΩ@10V;48.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 12.5nC@10V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 34.5mΩ@10V;48.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 12.5nC@10V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
AGM30P35S combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low RDS(ON). This device is ideal for load switch and battery protection applications.
Merkmale
KI-Übersetzung
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Anwendungen
KI-Übersetzung
- Motherboard/GPU core voltage
- Secondary synchronous rectifier for switching power supply
- Point-of-load applications
- Brushless DC motor driver
Nicht vorrätig
Benachrichtigen
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0976 | $ 0.98 |
| 100+ | $ 0.082 | $ 8.20 |
| 300+ | $ 0.0742 | $ 22.26 |
| 3,000+ | $ 0.0674 | $ 202.20 |
| 6,000+ | $ 0.0627 | $ 376.20 |
| 9,000+ | $ 0.0604 | $ 543.60 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 34.5mΩ@10V;48.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 12.5nC@10V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AGMSEMI | |
| Verp. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 6A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 34.5mΩ@10V;48.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 12.5nC@10V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
AGM30P35S combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low RDS(ON). This device is ideal for load switch and battery protection applications.
Merkmale
KI-Übersetzung
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Anwendungen
KI-Übersetzung
- Motherboard/GPU core voltage
- Secondary synchronous rectifier for switching power supply
- Point-of-load applications
- Brushless DC motor driver
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| AGM40P20S | AGMSEMI | SOP-8 | 45 | $ 0.1778 | ||
| AGM30P16S | AGMSEMI | SOP-8 | 140 | $ 0.1401 | ||
| AGM30P10SR | AGMSEMI | SOP-8 | 365 | $ 0.1778 | ||
| AGM40P26S | AGMSEMI | SOP-8 | 85 | $ 0.1032 | ||
| AGM55P10S | AGMSEMI | SOP-8 | 75 | $ 0.2599 | ||
| AGM30P10S | AGMSEMI | SOP-8 | 170 | $ 0.131 | ||
| AGM150P10S | AGMSEMI | SOP-8 | 495 | $ 0.1807 | ||
| AGM30P25S | AGMSEMI | SOP-8 | 0 | $ 0.1111 | ||
| AGM30P18S | AGMSEMI | SOP-8 | 0 | $ 0.3015 | ||
| AGM30P20S | AGMSEMI | SOP-8 | 0 | $ 0.1691 |