TI LMG3411R070RWHR
| 제조업체 | |
| 제조사 품번 | LMG3411R070RWHR |
| LCSC 번호 | C1850282 |
| 포장 | VQFN-32-EP(8x8) |
| 고객 번호 | |
| 주요 제원 | VQFN-32-EP(8x8) Power Distribution Switches, Load Drivers RoHS |
| 데이터시트 | TI LMG3411R070RWHR |
| RoHS 준수 | 1개 문서 이용 가능 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Power Management (PMIC)/Power Distribution Switches, Load Drivers | |
| 제조업체 | TI | |
| 포장 | VQFN-32-EP(8x8) |
| 타입 | 설명 | |
|---|---|---|
| 포장 | VQFN-32-EP(8x8) |
개요
The LMG341xR070 GaN power stage features an integrated driver and protection functions, enabling designers to achieve a higher level of power density and efficiency in power electronics systems. The inherent advantages of the LMG341x surpass those of silicon MOSFETs, including ultra-low input and output capacitance values, zero reverse recovery that can reduce switching losses by 80%, and low switching node ringing that can reduce EMI. These advantages support dense and efficient topologies such as the totem-pole PFC. The LMG341xR070 offers an alternative to traditional cascode GaN and discrete GaN FETs by integrating a unique set of features to simplify the design, maximize reliability, and optimize the performance of any power supply. The integrated gate driver supports 100V/ns switching (with almost zero Vds ringing), a current limit of less than 100ns can prevent accidental breakdown events on its own, overheat shutdown can prevent thermal runaway, and system interface signals can provide self-monitoring capabilities.
주요 특징
- TI GaN process qualified through real-application hard-switching mission profile reliability accelerated testing
- High-density power conversion design support
- Superior system performance vs. cascode or discrete GaN FETs
- Low-inductance 8mm×8mm QFN package for simplified design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- +12V unregulated supply only
- Integrated gate driver
- Zero common-source inductance, 20ns propagation delay for MHz-range switching frequency
- Process-tuned gate bias voltage for reliability assurance
- User-adjustable slew rate from 25 to 100V/ns
- Robust protection
- No external protection components required
- Overcurrent protection with response time <100ns
- Slew rate immunity >150V/ns
- Transient overvoltage immunity
- Overtemperature protection
- UVLO protection for all power rails
응용 분야
- High-density industrial and consumer power supplies
- Multi-level converters
- Photovoltaic inverters
- Industrial motor drives
- Uninterruptible power supplies
- High-voltage battery chargers
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 19.4782 | $ 19.48 |
| 10+ | $ 17.7789 | $ 177.79 |
| 30+ | $ 17.1619 | $ 514.86 |
| 100+ | $ 15.9394 | $ 1593.94 |
표준 패키지2000/Full Reel | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Power Management (PMIC)/Power Distribution Switches, Load Drivers | |
| 제조업체 | TI | |
| 포장 | VQFN-32-EP(8x8) |
| 타입 | 설명 | |
|---|---|---|
| 포장 | VQFN-32-EP(8x8) |
개요
The LMG341xR070 GaN power stage features an integrated driver and protection functions, enabling designers to achieve a higher level of power density and efficiency in power electronics systems. The inherent advantages of the LMG341x surpass those of silicon MOSFETs, including ultra-low input and output capacitance values, zero reverse recovery that can reduce switching losses by 80%, and low switching node ringing that can reduce EMI. These advantages support dense and efficient topologies such as the totem-pole PFC. The LMG341xR070 offers an alternative to traditional cascode GaN and discrete GaN FETs by integrating a unique set of features to simplify the design, maximize reliability, and optimize the performance of any power supply. The integrated gate driver supports 100V/ns switching (with almost zero Vds ringing), a current limit of less than 100ns can prevent accidental breakdown events on its own, overheat shutdown can prevent thermal runaway, and system interface signals can provide self-monitoring capabilities.
주요 특징
- TI GaN process qualified through real-application hard-switching mission profile reliability accelerated testing
- High-density power conversion design support
- Superior system performance vs. cascode or discrete GaN FETs
- Low-inductance 8mm×8mm QFN package for simplified design and layout
- Adjustable drive strength for switching performance and EMI control
- Digital fault status output signal
- +12V unregulated supply only
- Integrated gate driver
- Zero common-source inductance, 20ns propagation delay for MHz-range switching frequency
- Process-tuned gate bias voltage for reliability assurance
- User-adjustable slew rate from 25 to 100V/ns
- Robust protection
- No external protection components required
- Overcurrent protection with response time <100ns
- Slew rate immunity >150V/ns
- Transient overvoltage immunity
- Overtemperature protection
- UVLO protection for all power rails
응용 분야
- High-density industrial and consumer power supplies
- Multi-level converters
- Photovoltaic inverters
- Industrial motor drives
- Uninterruptible power supplies
- High-voltage battery chargers
C1850282 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



