MICROCHIP 1N5188US
| Hersteller | |
| Herst.-Teilenr. | 1N5188US |
| LCSC-Nr. | C17264841 |
| Verp. | Through Hole |
| Kundennummer | |
| Hauptmerkm. | 250ns 400V 1.5V@9A 3A Through Hole Single Diodes RoHS |
| Datenblatt | MICROCHIP 1N5188US |
| RoHS-Konformität | 2 Dokumente verfügbar |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole | |
| Reverse Recovery Time (trr) | 250ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 400V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@9A | |
| Reverse Leakage Current (Ir) | 250uA@400V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole | |
| Reverse Recovery Time (trr) | 250ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@9A | |
| Reverse Leakage Current (Ir) | 250uA@400V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
Beschreibung
This series of "fast recovery" rectifier diodes is ideal for high-reliability applications where failures cannot be tolerated. These industry-recognized rectifiers, rated at 3.0 amperes with working peak inverse voltages of 100 to 600 volts, are encapsulated in a void-free glass construction with internal "Class 1" metallurgical bonding. By removing the "US" suffix, these devices are also available in compliant axial-lead packages. Microsemi also offers a wide range of other rectifier products to meet varying current rating and recovery time speed requirements, including fast and ultrafast device types in both through-hole and surface-mount packages.
Merkmale
- Surface mount equivalent to popular JEDEC-registered 1N5186 to 1N5190 series
- Void-free hermetic glass package
- Triple passivation
- Internal "first-level" metallurgical bonding
- Peak working reverse voltage 100 to 600V
- Available in JAN, JANTX, and JANTXV screening per MIL-PRF-19500/424 by adding MQ, MX, or MV prefix respectively, e.g., MX1N5186US, MV1N5187US
- Axial-lead package equivalents also available (see separate datasheet for 1N5186 to 1N5190)
Anwendungen
Fast recovery 3 ampere, 100 to 600V rectifiers; high reliability applications; general rectification applications including bridge, half-bridge, freewheeling diode, etc.
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 24.2484 | $ 24.25 |
| 200+ | $ 9.6758 | $ 1935.16 |
| 500+ | $ 9.3531 | $ 4676.55 |
| 1,000+ | $ 9.1926 | $ 9192.60 |
Standardgehäuse1/Full Bag | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole | |
| Reverse Recovery Time (trr) | 250ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 400V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@9A | |
| Reverse Leakage Current (Ir) | 250uA@400V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole | |
| Reverse Recovery Time (trr) | 250ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Typ | Beschreibung | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@9A | |
| Reverse Leakage Current (Ir) | 250uA@400V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
Beschreibung
This series of "fast recovery" rectifier diodes is ideal for high-reliability applications where failures cannot be tolerated. These industry-recognized rectifiers, rated at 3.0 amperes with working peak inverse voltages of 100 to 600 volts, are encapsulated in a void-free glass construction with internal "Class 1" metallurgical bonding. By removing the "US" suffix, these devices are also available in compliant axial-lead packages. Microsemi also offers a wide range of other rectifier products to meet varying current rating and recovery time speed requirements, including fast and ultrafast device types in both through-hole and surface-mount packages.
Merkmale
- Surface mount equivalent to popular JEDEC-registered 1N5186 to 1N5190 series
- Void-free hermetic glass package
- Triple passivation
- Internal "first-level" metallurgical bonding
- Peak working reverse voltage 100 to 600V
- Available in JAN, JANTX, and JANTXV screening per MIL-PRF-19500/424 by adding MQ, MX, or MV prefix respectively, e.g., MX1N5186US, MV1N5187US
- Axial-lead package equivalents also available (see separate datasheet for 1N5186 to 1N5190)
Anwendungen
Fast recovery 3 ampere, 100 to 600V rectifiers; high reliability applications; general rectification applications including bridge, half-bridge, freewheeling diode, etc.
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

