MICROCHIP UTR2310
| Produttore | |
| Cod. Prod. | UTR2310 |
| Cod. LCSC | C17223045 |
| Imballo | Through Hole |
| Numero Cliente | |
| Attr. chiave | 250ns 100V 1.1V@2A 2A Through Hole Single Diodes |
| Scheda Tecnica | MICROCHIP UTR2310 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MICROCHIP | |
| Imballo | Through Hole | |
| Reverse Recovery Time (trr) | 250ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@2A | |
| Reverse Leakage Current (Ir) | 5uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MICROCHIP | |
| Imballo | Through Hole | |
| Reverse Recovery Time (trr) | 250ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Tipo | Descrizione | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@2A | |
| Reverse Leakage Current (Ir) | 5uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
Descrizione
The small size and high surge capability make this series of power switching rectifiers suitable for power supplies where size, weight, and reliability are critical. Microsemi also offers a wide range of other rectifier products to meet higher and lower current ratings for various recovery time requirements, including standard, fast, and ultrafast device types in both through-hole and surface mount packages.
Caratteristiche
- Miniature void-free hermetically sealed glass package.
- 2A to 4A fast recovery rectifier series, peak reverse working voltage range 50V to 600V.
- Extremely rugged construction.
- Internal "Class 1" metallurgical bonding.
- RoHS compliant versions available.
Applicazioni
- Surge current rating up to 100 amperes.
- Low thermal resistance.
- Controlled avalanche and peak reverse power capability.
- Inherent radiation hardness as described in Microsemi MicroNote 050.
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 31.172 | $ 31.17 |
| 200+ | $ 12.4385 | $ 2487.70 |
| 500+ | $ 12.0235 | $ 6011.75 |
| 1,000+ | $ 11.8175 | $ 11817.50 |
Package Standard1/Full Bag | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MICROCHIP | |
| Imballo | Through Hole | |
| Reverse Recovery Time (trr) | 250ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@2A | |
| Reverse Leakage Current (Ir) | 5uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MICROCHIP | |
| Imballo | Through Hole | |
| Reverse Recovery Time (trr) | 250ns | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Tipo | Descrizione | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@2A | |
| Reverse Leakage Current (Ir) | 5uA@100V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 2A |
Descrizione
The small size and high surge capability make this series of power switching rectifiers suitable for power supplies where size, weight, and reliability are critical. Microsemi also offers a wide range of other rectifier products to meet higher and lower current ratings for various recovery time requirements, including standard, fast, and ultrafast device types in both through-hole and surface mount packages.
Caratteristiche
- Miniature void-free hermetically sealed glass package.
- 2A to 4A fast recovery rectifier series, peak reverse working voltage range 50V to 600V.
- Extremely rugged construction.
- Internal "Class 1" metallurgical bonding.
- RoHS compliant versions available.
Applicazioni
- Surge current rating up to 100 amperes.
- Low thermal resistance.
- Controlled avalanche and peak reverse power capability.
- Inherent radiation hardness as described in Microsemi MicroNote 050.
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

