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EDA-ModelleEasyEDA
MXIC MX30LF1G18AC-TI
| Hersteller | |
| Herst.-Teilenr. | MX30LF1G18AC-TI |
| LCSC-Nr. | C128679 |
| Verp. | TSOPI-48 |
| Kundennummer | |
| Hauptmerkm. | 1G-bit NAND Flash Memory |
| Datenblatt | MXIC MX30LF1G18AC-TI |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | MXIC | |
| Verp. | TSOPI-48 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Software reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 20ns | |
| Interface | Parallel | |
| Standby Supply Current | 80uA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | MXIC | |
| Verp. | TSOPI-48 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Software reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 20ns | |
| Interface | Parallel | |
| Standby Supply Current | 80uA |
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Merkmale
KI-Übersetzung
- 1G-bit SLC NAND Flash
- Bus: x8
- Page size: (2048 + 64) byte
- Block size: (128K + 4K) byte
- ONFI 1.0 compliant
- Multiplexed Command/Address/Data
- User Redundancy: 64-byte attached to each page
- Fast Read Access
- Latency of array to register: 25us
- Sequential read: 20ns
- Cache Read Support
- Page Program Operation
- Page program time: 300us(typ.)
- Cache Program Support
- Block Erase Operation
- Block erase time: 1ms (typ.)
- Single Voltage Operation: VCC: 2.7 to 3.6V
- Low Power Dissipation
- Max. 30mA Active current (Read/Program/Erase)
- Sleep Mode: 80uA (Max) standby current
- Hardware Data Protection: WP# pin
- Block Protection
- PT (Protection) pin: active high at power-on, which protects the entire chip. The pin has an internal weak pull down
- Temporary protection/un-protection function (enabling by PT pin)
- Solid protection (enabling by PT pin)
- Device Status Indicators
- Ready/Busy (R/B#) pin
- Status R
Vorrätig: 76
76 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 11.4229 | $ 11.42 |
| 10+ | $ 10.334 | $ 103.34 |
| 30+ | $ 9.6695 | $ 290.09 |
| 96+ | $ 9.1128 | $ 874.83 |
Standardgehäuse96/Full Tray | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | MXIC | |
| Verp. | TSOPI-48 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Software reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 20ns | |
| Interface | Parallel | |
| Standby Supply Current | 80uA |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | MXIC | |
| Verp. | TSOPI-48 | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Read buffer function;Software reset function;Hardware write protection function;ECC error correction function;OTP region write protection and lock function | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 10 years | |
| Block Erase Time(tBE) | 1ms | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 20ns | |
| Interface | Parallel | |
| Standby Supply Current | 80uA |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 1G-bit SLC NAND Flash
- Bus: x8
- Page size: (2048 + 64) byte
- Block size: (128K + 4K) byte
- ONFI 1.0 compliant
- Multiplexed Command/Address/Data
- User Redundancy: 64-byte attached to each page
- Fast Read Access
- Latency of array to register: 25us
- Sequential read: 20ns
- Cache Read Support
- Page Program Operation
- Page program time: 300us(typ.)
- Cache Program Support
- Block Erase Operation
- Block erase time: 1ms (typ.)
- Single Voltage Operation: VCC: 2.7 to 3.6V
- Low Power Dissipation
- Max. 30mA Active current (Read/Program/Erase)
- Sleep Mode: 80uA (Max) standby current
- Hardware Data Protection: WP# pin
- Block Protection
- PT (Protection) pin: active high at power-on, which protects the entire chip. The pin has an internal weak pull down
- Temporary protection/un-protection function (enabling by PT pin)
- Solid protection (enabling by PT pin)
- Device Status Indicators
- Ready/Busy (R/B#) pin
- Status R
C128679 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |