Results: 9
Package
Continuous Drain Current
Drain Source Voltage
Power Dissipation
Encapsulated Type
Operating Temperature
Drain-Source On-State Resistance(20V)
Total Gate Charge
Channel Type
Drain Source Threshold Voltage
Output Capacitance
Input Capacitance
Reverse Transfer Capacitance
Results: 9
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
LCSC Part#
Package
Packaging
Channel Type
Power Dissipation
Continuous Drain Current
Drain Source Voltage
Drain-Source On-State Resistance(15V)
Operating Temperature
Drain-Source On-State Resistance(18V)
Configuration
Drain-Source On-State Resistance(20V)
Drain Source Threshold Voltage
Encapsulated Type
Reverse Transfer Capacitance
Input Capacitance
Total Gate Charge
Drain-Source On-State Resistance(10V)
Output Capacitance
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
LCSC Part#
Package
Packaging
Channel Type
Power Dissipation
Continuous Drain Current
Drain Source Voltage
Drain-Source On-State Resistance(15V)
Operating Temperature
Drain-Source On-State Resistance(18V)
Configuration
Drain-Source On-State Resistance(20V)
Drain Source Threshold Voltage
Encapsulated Type
Reverse Transfer Capacitance
Input Capacitance
Total Gate Charge
Drain-Source On-State Resistance(10V)
Output Capacitance
Min: 1
Mult: 1
442
(++)
In Stock
CI7N170SMTokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C2842690TO-247-3Tube-packed1 N-Channel62W7A1700V------------
Min: 1
Mult: 1
180
(++)
In Stock
CI60N120SM4Tokmas
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C2980704TO-247-4LTube-packed1 N-Channel330W60A1200V--55℃~+175℃--45mΩ2.5VSingle tube29pF3550pF160nC--
Min: 1
Mult: 1
146
(++)
In Stock
CI19N120SMTokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C2959833TO-247-3Tube-packed1 N-Channel125W19A1200V--55℃~+175℃--165mΩ2.5VSingle tube36pF950pF50nC--
Min: 1
Mult: 1
143
(++)
In Stock
CI30N65SMTokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3010930TO-247-3Tube-packed1 N-Channel171W30A650V--55℃~+175℃--65mΩ2.3VSingle tube77pF1700pF65nC--
Min: 1
Mult: 1
119
(++)
In Stock
CI90N120SMTokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C5364636TO-247-3Tube-packed1 N-Channel463W90A1200V--55℃~+150℃--27mΩ2.5VSingle tube42.8pF4700pF164nC-231pF
8% OFF
Min: 1
Mult: 1
46
(++)
In Stock
CI40N65SM(TOKMAS)Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C18214413TO-247-3Tube-packed----------------
Min: 1
Mult: 1
32
(++)
In Stock
CI60N120SM5(TOKMAS)Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C21547659TO-247-3Tube-packed1 N-Channel--1200V------------
Min: 1
Mult: 1
23
(++)
In Stock
CI90N120SM4Tokmas
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C5364637TO-247-4Tube-packed--90A1200V------------
Min: 1
Mult: 1
20
(++)
In Stock
CI30N120M4(TOKMAS)Tokmas
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C21547658TO-247-4Tube-packed1 N-Channel--1200V------------