IGBTs | Triode/MOS Tube/Transistor

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Gate-Emitter Threshold Voltage (Vge(th)@Ic)

Operating Temperature

Total Gate Charge (Qg@Ic,Vge)

Diode Forward Voltage (Vf@If)

Power Dissipation (Pd)

Collector Current (Ic)

Input Capacitance (Cies@Vce)

Turn?on Switching Loss (Eon)

Turn?off Delay Time (Td(off))

Collector-Emitter Breakdown Voltage (Vces)

Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)

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RoHS

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Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	LCSC Part#	Package	Packaging	Power Dissipation (Pd)	Turn?off Delay Time (Td(off))	Operating Temperature	Turn?on Delay Time (Td(on))	Collector Current (Ic)	Collector-Emitter Breakdown Voltage (Vces)	Type	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	Total Gate Charge (Qg@Ic,Vge)	Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	Diode Reverse Recovery Time (Trr)	Turn?off Switching Loss (Eoff)	Turn?on Switching Loss (Eon)	Input Capacitance (Cies@Vce)	Diode Forward Voltage (Vf@If)

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	LCSC Part#	Package	Packaging	Power Dissipation (Pd)	Turn?off Delay Time (Td(off))	Operating Temperature	Turn?on Delay Time (Td(on))	Collector Current (Ic)	Collector-Emitter Breakdown Voltage (Vces)	Type	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	Total Gate Charge (Qg@Ic,Vge)	Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	Diode Reverse Recovery Time (Trr)	Turn?off Switching Loss (Eoff)	Turn?on Switching Loss (Eon)	Input Capacitance (Cies@Vce)	Diode Forward Voltage (Vf@If)
Datasheet		Min: 1 Mult: 1	7 (0+0+7) In Stock	IHW20N135R5F	FUXINSEMI	333W 40A 1.35kV TO-247-3 IGBTs ROHS		C7467022	TO-247-3	Tube-packed	333W	204ns	-40℃~+175℃	-	40A	1.35kV	-	4.8V@1mA	175nC@20A,15V	1.85V@20A,15V	-	-	1.02mJ	1.781nF@25V	1.5V@20A