TOSHIBA TPN4R712MD,L1Q
| Fabricante | |
| N.º de pieza fab. | TPN4R712MD,L1Q |
| Nº LCSC | C5961944 |
| Emb. | TSON-8(3.1x3.1) |
| Número de Cliente | |
| Atrib. clave | 20V 36A 1.2V 42W 4.7mΩ@4.5V 1 P-Channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS |
| Hoja de Datos | TOSHIBA TPN4R712MD,L1Q |
| Piezas alternativas | 2 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | TOSHIBA | |
| Emb. | TSON-8(3.1x3.1) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 42W | |
| RDS(on) | 4.7mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.3nF | |
| Gate Charge(Qg) | 65nC@5V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | TOSHIBA | |
| Emb. | TSON-8(3.1x3.1) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| RDS(on) | 4.7mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.3nF | |
| Gate Charge(Qg) | 65nC@5V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V)
- Low leakage current: IDSS = -10 μA (max.) (VDS = -20 V)
- Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)
Aplicaciones
Traducción por IA
- Lithium-ion secondary battery
- Power management switch
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.7122 | $ 0.71 |
| 200+ | $ 0.2849 | $ 56.98 |
| 500+ | $ 0.2758 | $ 137.90 |
| 1,000+ | $ 0.2698 | $ 269.80 |
Encapsulado Estándar5000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | TOSHIBA | |
| Emb. | TSON-8(3.1x3.1) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 42W | |
| RDS(on) | 4.7mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.3nF | |
| Gate Charge(Qg) | 65nC@5V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | TOSHIBA | |
| Emb. | TSON-8(3.1x3.1) | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| RDS(on) | 4.7mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.3nF | |
| Gate Charge(Qg) | 65nC@5V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V)
- Low leakage current: IDSS = -10 μA (max.) (VDS = -20 V)
- Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)
Aplicaciones
Traducción por IA
- Lithium-ion secondary battery
- Power management switch
C5961944 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| SP20P07NJ | Siliup | PDFNWB-8L(3.3x3.3) | 1,095 | $0.0966 $0.1379 | ||
| XPN9R614MC,L1XHQ | TOSHIBA | TSON-8(3.1x3.1) | 50 | $ 1.8635 |

