HGSEMI AT24C08DQ2/TR-HG
| Produttore | HGSEMIAsian Brands |
| Cod. Prod. | AT24C08DQ2/TR-HG |
| Cod. LCSC | C52953107 |
| Imballo | DFN-8(2x2) |
| Numero Cliente | |
| Attr. chiave | 8Kbit I2C DFN-8(2x2) Memory |
| Scheda Tecnica | HGSEMI AT24C08DQ2/TR-HG |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | HGSEMI | |
| Imballo | DFN-8(2x2) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Noise suppression function;Built-in power-on reset (POR);Hardware write protection function | |
| Memory Size | 8Kbit | |
| Voltage - Supply | 1.7V~5.5V;0.8mA | |
| Clock Frequency | 400kHz;1MHz | |
| Access Time | 0.9us | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | I2C |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | HGSEMI | |
| Imballo | DFN-8(2x2) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Noise suppression function;Built-in power-on reset (POR);Hardware write protection function | |
| Memory Size | 8Kbit | |
| Voltage - Supply | 1.7V~5.5V;0.8mA |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 400kHz;1MHz | |
| Access Time | 0.9us | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | I2C |
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Descrizione
Traduzione AI
AT24C08/AT24C16 is an I²C-compatible serial EEPROM device. It contains an 8K-bit (1K-byte) / 16K-bit (2K-byte) memory array with a 16-byte page size.
Caratteristiche
Traduzione AI
- Single supply voltage with high-speed mode
- Minimum operating voltage down to 1.7V
- 400kHz/1MHz clock support over 1.7V to 5.5V range
- Low-power CMOS technology
- Read current 0.2mA (400kHz, typical)
- Write current 0.8mA (400kHz, typical)
- Schmitt trigger with filtered inputs for noise suppression
- Sequential and random read modes
- Page write mode with partial page write support
- Write protection for entire memory array
- Additional writeable lockable page
- Self-timed write cycle (5ms max)
- High reliability
- Endurance: 1,000,000 write cycles
- Data retention: 100 years
- HBM: 4kV
- Latch-up immunity: ±200mA (25°C)
- Packages: DIP-8, SOP-8, TSSOP-8, SOT-23-5, DFN-8, MSOP-8
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 3,995
3,995 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.1083 | $ 0.54 |
| 50+ | $ 0.086 | $ 4.30 |
| 150+ | $ 0.0748 | $ 11.22 |
| 500+ | $ 0.0665 | $ 33.25 |
| 2,500+ | $ 0.0598 | $ 149.50 |
| 4,000+ | $ 0.0564 | $ 225.60 |
Package Standard4000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | HGSEMI | |
| Imballo | DFN-8(2x2) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Noise suppression function;Built-in power-on reset (POR);Hardware write protection function | |
| Memory Size | 8Kbit | |
| Voltage - Supply | 1.7V~5.5V;0.8mA | |
| Clock Frequency | 400kHz;1MHz | |
| Access Time | 0.9us | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | I2C |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | HGSEMI | |
| Imballo | DFN-8(2x2) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Noise suppression function;Built-in power-on reset (POR);Hardware write protection function | |
| Memory Size | 8Kbit | |
| Voltage - Supply | 1.7V~5.5V;0.8mA |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 400kHz;1MHz | |
| Access Time | 0.9us | |
| Data Retention - TDR (Year) | 100 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 1uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | I2C |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
AT24C08/AT24C16 is an I²C-compatible serial EEPROM device. It contains an 8K-bit (1K-byte) / 16K-bit (2K-byte) memory array with a 16-byte page size.
Caratteristiche
Traduzione AI
- Single supply voltage with high-speed mode
- Minimum operating voltage down to 1.7V
- 400kHz/1MHz clock support over 1.7V to 5.5V range
- Low-power CMOS technology
- Read current 0.2mA (400kHz, typical)
- Write current 0.8mA (400kHz, typical)
- Schmitt trigger with filtered inputs for noise suppression
- Sequential and random read modes
- Page write mode with partial page write support
- Write protection for entire memory array
- Additional writeable lockable page
- Self-timed write cycle (5ms max)
- High reliability
- Endurance: 1,000,000 write cycles
- Data retention: 100 years
- HBM: 4kV
- Latch-up immunity: ±200mA (25°C)
- Packages: DIP-8, SOP-8, TSSOP-8, SOT-23-5, DFN-8, MSOP-8
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

