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Advanced Linear Devices ALD310704APCL

Fabricante
Cód. da peça
ALD310704APCL
Nº LCSC
C17565214
Emb.
PDIP-16
Número do Cliente
Atrib. princ.
8V 1.2kΩ@5V 500mW 420mV 4 P-Channel PDIP-16 FET, MOSFET Arrays RoHS
Folha de DadosAdvanced Linear Devices ALD310704APCL
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Qtd.Preço unit.(Apenas para referência)Valor total
1+$ 18.0662$ 18.07
200+$ 7.2094$ 1441.88
500+$ 6.9681$ 3484.05
1,000+$ 6.8491$ 6849.10
Encapsulamento Padrão50/Full Tube
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Especificações do Produto

Tudo
TipoDescrição
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
FabricanteAdvanced Linear Devices
Emb.PDIP-16
Drain to Source Voltage8V
Current - Continuous Drain(Id)-
RDS(on)1.2kΩ@5V
Pd - Power Dissipation500mW
Gate Threshold Voltage (Vgs(th))420mV
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number4 P-Channel
Input Capacitance(Ciss)2.5pF
Gate Charge(Qg)-
Operating Temperature0℃~+70℃
Output Capacitance(Coss)-

Descrição

Tradução por IA

The ALD310704A/ALD310704 high-precision monolithic quad P-channel MOSFET array is factory-trimmed using proven EPAD CMOS technology. Available in a quad-channel version, it is a member of the EPAD matched-pair MOSFET family. The ALD310704A/ALD310704 is the P-channel counterpart to the popular ALD110804A/ALD110804 precision threshold devices. Together, these two MOSFET families enable circuits based on complementary precision N-channel and P-channel MOSFET arrays.

The ALD310704A/ALD310704 is suited for low-voltage, low-power small-signal applications, featuring a precise -0.40V gate threshold voltage that enables circuit designs operating at very low supply voltages — such as circuits powered by < +1.0V supplies — where operation occurs below the threshold voltage of the ALD310704A/ALD310704. This characteristic also extends the operating range of input/output signals, particularly in ultra-low operating voltage environments. Using these low-threshold precision devices, circuits with multiple cascaded stages can be constructed to operate at extremely low supply or bias voltage levels.

The ALD310704A/ALD310704 MOSFETs are designed for outstanding matching of device electrical characteristics. The gate threshold voltage VGS(th) is precisely set to -0.40V ± 0.02V, with a typical offset voltage of only ± 0.001V (1mV). Since these devices reside on the same monolithic die, they also exhibit excellent temperature tracking. They serve as general-purpose design building blocks for a wide range of precision analog applications, including current mirrors, matched circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers. These devices also excel in limited supply voltage applications such as ultra-low-level precision voltage clamping. Beyond matched-pair electrical characteristics, each individual MOSFET features well-controlled process parameters, allowing designers to rely on tight design limits across different production lots.

Designed to provide minimum offset voltage and differential thermal response, these devices are also suitable for switching and amplification applications in -0.40V to -8.0V (±0.20V to ±4.0V) supply systems where low input bias current, low input capacitance, and fast switching speed are required. These devices feature well-controlled turn-off and subthreshold characteristics, operating in the same manner as standard enhancement-mode P-channel MOSFETs. However, the precision of the gate threshold voltage introduces two key additional features or operational characteristics. First, at or below the gate threshold voltage (subthreshold region), the operating current level varies exponentially with gate bias voltage. Second, circuits can be biased and operated in the subthreshold region with nA-level bias currents and nW-level power dissipation.

Recursos

Tradução por IA
  • Precisely matched gate threshold voltage
  • Precise offset voltage (Vos): ALD310704A: typical 1mV; ALD310704: typical 2mV
  • Subthreshold voltage operation
  • Minimum operating voltage below 0.4V
  • Ultra-low minimum operating current below 1nA
  • Micro-power operation
  • Wide dynamic operating current range
  • Exponential operating current range
  • Matched transconductance and output conductance
  • Matched and tracking temperature characteristics
  • Tight lot-to-lot parameter control
  • Positive, zero, and negative VGS(th) temperature coefficient bias current
  • Low input capacitance
  • Low input/output leakage current

Aplicações

Tradução por IA
  • 0.5% accuracy current mirrors and current sources
  • Low temperature coefficient (<= 50ppm/°C) current mirrors/sources
  • Energy harvesting circuits
  • Ultra-low voltage analog and digital circuits
  • Backup battery circuits and power failure detectors
  • Precision low-level voltage clamps
  • Low-level zero-crossing detectors
  • Source followers and buffers
  • Precision capacitive probe and sensor interfaces
  • Precision charge detectors and charge integrators
  • Discrete differential amplifier input stages
  • Peak detectors and level translators
  • High-side switches and sample-and-hold switches
  • Precision current multipliers
  • Discrete analog switches/multiplexers
  • Discrete voltage comparators