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Wuxi China Resources Huajing Microelectronics CS12N65FA9H
| Fabricante | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| N.º de pieza fab. | CS12N65FA9H |
| Nº LCSC | C140757 |
| Emb. | TO-220F |
| Número de Cliente | |
| Atrib. clave | 55W 650V 12A 700mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs |
| Hoja de Datos | Wuxi China Resources Huajing Microelectronics CS12N65FA9H |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-220F | |
| Output Capacitance(Coss) | 184pF | |
| Ciss-Input Capacitance | 2.06nF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 44nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-220F | |
| Output Capacitance(Coss) | 184pF | |
| Ciss-Input Capacitance | 2.06nF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 44nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
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Descripción
Traducción por IA
CS12N65F A9H is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces on-state losses, improves switching performance, and enhances avalanche energy capability. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-220F package, RoHS compliant.
Características
Traducción por IA
- Fast switching
- Low on-resistance (Rdson ≤ 0.7Ω)
- Low gate charge (typical: 44nC)
- Low reverse transfer capacitance (typical: 16pF)
- 100% single-pulse avalanche energy tested
Aplicaciones
Traducción por IA
- Power switching circuits for adapters and chargers.
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 1.5012 | $ 1.50 |
| 10+ | $ 1.2933 | $ 12.93 |
| 50+ | $ 1.1893 | $ 59.47 |
| 100+ | $ 1.0853 | $ 108.53 |
| 500+ | $ 1.0236 | $ 511.80 |
| 1,000+ | $ 0.9911 | $ 991.10 |
Encapsulado Estándar50/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-220F | |
| Output Capacitance(Coss) | 184pF | |
| Ciss-Input Capacitance | 2.06nF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 44nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-220F | |
| Output Capacitance(Coss) | 184pF | |
| Ciss-Input Capacitance | 2.06nF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 12A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 44nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
CS12N65F A9H is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces on-state losses, improves switching performance, and enhances avalanche energy capability. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-220F package, RoHS compliant.
Características
Traducción por IA
- Fast switching
- Low on-resistance (Rdson ≤ 0.7Ω)
- Low gate charge (typical: 44nC)
- Low reverse transfer capacitance (typical: 16pF)
- 100% single-pulse avalanche energy tested
Aplicaciones
Traducción por IA
- Power switching circuits for adapters and chargers.
C140757 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| CS12N60FA9R | Wuxi China Resources Huajing Microelectronics | Similares | TO-220F | 1,000 | $ 0.6146 | ||
| CS12N60FA9H | Wuxi China Resources Huajing Microelectronics | Similares | TO-220F-3 | 0 | $ 0.8562 | ||
| CS12N65FA9R | Wuxi China Resources Huajing Microelectronics | Similares | TO-220F | 0 | $ 0.9407 | ||
| CS16N65FA9H | Wuxi China Resources Huajing Microelectronics | Similares | TO-220F-3 | 0 | $ 1.29 | ||
| CS20N65FA9H | Wuxi China Resources Huajing Microelectronics | Similares | TO-220F-3 | 0 | $ 1.5012 |