onsemi HUF76129D3S
| Fabricante | |
| Cód. da peça | HUF76129D3S |
| Nº LCSC | C3290977 |
| Emb. | TO-252-3(DPAK) |
| Número do Cliente | |
| Atrib. princ. | 30V 20A 105W 16mΩ@10V 1 N-channel N-Channel TO-252-3(DPAK) Single FETs, MOSFETs |
| Folha de Dados | onsemi HUF76129D3S |
| Peças alternativas | 5 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252-3(DPAK) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 720pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.425nF | |
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252-3(DPAK) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 720pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.425nF |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Descrição
These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering excellent performance. The devices can sustain high energy in avalanche mode, and the diodes feature extremely short reverse recovery time and minimal stored charge. They are specifically designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Recursos
- Logic-level gate drive
- 20A, 30V
- Ultra-low on-resistance, rDS(ON) = 0.016 Ω
- Temperature-compensated PSPICE model
- Temperature-compensated SABER model
- Thermal impedance SPICE model
- Thermal impedance SABER model
- Peak current vs. pulse width curve
- UIS rating curve
Aplicações
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 0.5972 | $ 0.60 |
| 200+ | $ 0.2315 | $ 46.30 |
| 500+ | $ 0.2238 | $ 111.90 |
| 1,000+ | $ 0.2192 | $ 219.20 |
Encapsulamento Padrão2500/Full Reel | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252-3(DPAK) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 720pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.425nF | |
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252-3(DPAK) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 720pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.425nF |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 46nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Descrição
These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering excellent performance. The devices can sustain high energy in avalanche mode, and the diodes feature extremely short reverse recovery time and minimal stored charge. They are specifically designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Recursos
- Logic-level gate drive
- 20A, 30V
- Ultra-low on-resistance, rDS(ON) = 0.016 Ω
- Temperature-compensated PSPICE model
- Temperature-compensated SABER model
- Thermal impedance SPICE model
- Thermal impedance SABER model
- Peak current vs. pulse width curve
- UIS rating curve
Aplicações
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Peças alternativas
| MPN | Fabricante | Tipo alternativo | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|---|
| CMD50N10 | Cmos | Similares | TO-252 | 160 | $0.3533 $0.3718 | ||
| HY1506D | HUAYI | Similares | TO-252-2L | 1,497 | $ 0.259 | ||
| STD35NF06L(UMW) | UMW | Similares | TO-252 | 2,340 | $ 0.3428 | ||
| IRLR2905ZTRPBF | Infineon | Similares | TO-252 | 1,737 | $ 0.6471 | ||
| STU2240NL-VB | VBsemi Elec | Similares | TO-252 | 20 | $0.4387 $0.5161 |